Extraction of bulk and accumulation mobility components in double gate junctionless MOSFET

Abstract

In this work, we report on the extraction of low field mobility values (μ0) for Double Gate (DG) Junctionless (JL) transistor. The methodology is based on the determination of flatband voltage through McLarty function method and modification of the same in the accumulation region for determining the accumulation mobility values. Results show that accumulation mobility values are higher than bulk mobility values due to the screening effect. The values of bulk mobility determined from the extraction technique agree well with those reported in the literature. The work provides new viewpoints into the extraction and interpretation of mobility (accumulation and bulk) values, and will be useful in the development of compact models for JL devices. © 2016 IEEE.