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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5295
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:39:16Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:39:16Z-
dc.date.issued2017-
dc.identifier.citationYu, C. -., Lin, J. T., Chang, T. -., Lin, C. -., Haung, C. -., & Kranti, A. (2017). A vertical and junctionless channel with T-shaped gate 1T-DRAM using new operate mechanism. Paper presented at the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 863-865. doi:10.1109/ICSICT.2016.7999063en_US
dc.identifier.isbn9781467397179-
dc.identifier.otherEID(2-s2.0-85028648618)-
dc.identifier.urihttps://doi.org/10.1109/ICSICT.2016.7999063-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5295-
dc.description.abstractA vertical junctionless channel with T-shaped gate (VJCT) structure has been proposed as 1T DRAM. Designing in vertical channel topology can overcome scalability issues and reduce the area occupied. Also, the junctionless architecture of the channel can be easily fabricated. The T-shaped gate enhances the gate controllability over the channel and improves performance. Therefore, the proposed structure can enhance programming window and retention time. In addition, we use a new operating mechanism to achieve high writing speed and low power consumption for the device. © 2016 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedingsen_US
dc.subjectLow-power consumptionen_US
dc.subjectOperating mechanismen_US
dc.subjectProgramming windowen_US
dc.subjectRetention timeen_US
dc.subjectScalability issueen_US
dc.subjectT-shaped gateen_US
dc.subjectVertical channelsen_US
dc.subjectWriting speeden_US
dc.subjectIntegrated circuitsen_US
dc.titleA vertical and junctionless channel with T-shaped gate 1T-DRAM using new operate mechanismen_US
dc.typeConference Paperen_US
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