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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kranti, Abhinav | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-17T15:39:16Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-17T15:39:16Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Lin, C. -., Lin, J. -., Lee, W. -., Huang, C. -., Chang, T. -., & Kranti, A. (2017). Punch-through reading mechanism and body raised up structure for a novel punch-through DRAM. Paper presented at the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 866-868. doi:10.1109/ICSICT.2016.7999064 | en_US |
| dc.identifier.isbn | 9781467397179 | - |
| dc.identifier.other | EID(2-s2.0-85028637557) | - |
| dc.identifier.uri | https://doi.org/10.1109/ICSICT.2016.7999064 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5296 | - |
| dc.description.abstract | It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 μA/um) at shorter gate lengths. The retention time can be improved by using a raised P-body which is beneficial in achieving a retention time of 341 ms? © 2016 IEEE. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
| dc.source | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | en_US |
| dc.subject | 1t drams | en_US |
| dc.subject | Channel length | en_US |
| dc.subject | Channel thickness | en_US |
| dc.subject | Gate length | en_US |
| dc.subject | Programming window | en_US |
| dc.subject | Punch-through | en_US |
| dc.subject | Retention time | en_US |
| dc.subject | Integrated circuits | en_US |
| dc.title | Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Electrical Engineering | |
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