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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5342
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:36Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:36Z-
dc.date.issued2016-
dc.identifier.citationParihar, M. S., & Kranti, A. (2016). Junctionless transistors for dynamic memory and sensing applications. Paper presented at the 2014 IEEE International Nanoelectronics Conference, INEC 2014, doi:10.1109/INEC.2014.7460448en_US
dc.identifier.isbn9781479950379-
dc.identifier.otherEID(2-s2.0-84971290053)-
dc.identifier.urihttps://doi.org/10.1109/INEC.2014.7460448-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5342-
dc.description.abstractIn this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in the reading current of the two logic states. A possible application of these JL transistors for designing an ultra-sensitive bio-sensor is also outlined and compared with the conventional inversion mode transistor design. © 2014 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2014 IEEE International Nanoelectronics Conference, INEC 2014en_US
dc.subjectBiosensorsen_US
dc.subjectDynamic random access storageen_US
dc.subjectNanoelectronicsen_US
dc.subjectTransistorsen_US
dc.subjectbipolaren_US
dc.subjectDesign optimizationen_US
dc.subjectjunctionlessen_US
dc.subjectJunctionless transistorsen_US
dc.subjectOutput characteristicsen_US
dc.subjectSensing applicationsen_US
dc.subjectSubthreshold slopeen_US
dc.subjectTransistor designsen_US
dc.subjectImpact ionizationen_US
dc.titleJunctionless transistors for dynamic memory and sensing applicationsen_US
dc.typeConference Paperen_US
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