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DC Field | Value | Language |
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dc.contributor.author | Vishvakarma, Santosh Kumar | en_US |
dc.contributor.author | Sharma, Vishal | en_US |
dc.contributor.author | Khuswah, C. B. | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-17T15:41:38Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-17T15:41:38Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Vishvakarma, S. K., Reniwal, B. S., Sharma, V., Khuswah, C. B., & Dwivedi, D. (2016). Nanoscale memory design for efficient computation: Trends, challenges and opportunity. Paper presented at the Proceedings - 2015 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2015, 29-34. doi:10.1109/iNIS.2015.58 | en_US |
dc.identifier.isbn | 9781467396912 | - |
dc.identifier.other | EID(2-s2.0-84966638874) | - |
dc.identifier.uri | https://doi.org/10.1109/iNIS.2015.58 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5348 | - |
dc.description.abstract | The importance of embedded memory in contemporary multi-core processors and system-on-chip (SoC) for wearable electronics and IoT applications is growing. Intensive data processing in such processors and SoCs necessitates larger on-chip, energy-efficient static random access memory (SRAM). However, there are several challenges associated with low-voltage SRAMs. In this paper we have discussed the major hurdles at technology front for low power and robust SRAM design. We have discussed the different circuit techniques to mitigate these severe reliability concerns for embedded SRAM. Furthermore, this paper presented the recent development in embedded memory technology targeted to efficient computation. We have analyzed the effect of various device sizing on memory stability. The novel current mode circuit is also presented for high speed, offset tolerant SRAM sense amplifier. The Fin FET memory design is explored to reduce the external manifestation of device mismatch on SRAM stability and memory yield. © 2015 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
dc.source | Proceedings - 2015 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2015 | en_US |
dc.subject | Amplifiers (electronic) | en_US |
dc.subject | Application specific integrated circuits | en_US |
dc.subject | Computational efficiency | en_US |
dc.subject | Data handling | en_US |
dc.subject | Energy efficiency | en_US |
dc.subject | Information systems | en_US |
dc.subject | Integrated circuit design | en_US |
dc.subject | Logic design | en_US |
dc.subject | Memory architecture | en_US |
dc.subject | Nanoelectronics | en_US |
dc.subject | Programmable logic controllers | en_US |
dc.subject | Random access storage | en_US |
dc.subject | Reconfigurable hardware | en_US |
dc.subject | System-on-chip | en_US |
dc.subject | Efficient computation | en_US |
dc.subject | Embedded memory technologies | en_US |
dc.subject | inter die variations | en_US |
dc.subject | intra die variations | en_US |
dc.subject | Latch sense amplifiers | en_US |
dc.subject | Offset | en_US |
dc.subject | Static random access memory | en_US |
dc.subject | System on chips (SoC) | en_US |
dc.subject | Static random access storage | en_US |
dc.title | Nanoscale Memory Design for Efficient Computation: Trends, Challenges and Opportunity | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Electrical Engineering |
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