Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5348
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dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.contributor.authorSharma, Vishalen_US
dc.contributor.authorKhuswah, C. B.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:38Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:38Z-
dc.date.issued2016-
dc.identifier.citationVishvakarma, S. K., Reniwal, B. S., Sharma, V., Khuswah, C. B., & Dwivedi, D. (2016). Nanoscale memory design for efficient computation: Trends, challenges and opportunity. Paper presented at the Proceedings - 2015 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2015, 29-34. doi:10.1109/iNIS.2015.58en_US
dc.identifier.isbn9781467396912-
dc.identifier.otherEID(2-s2.0-84966638874)-
dc.identifier.urihttps://doi.org/10.1109/iNIS.2015.58-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5348-
dc.description.abstractThe importance of embedded memory in contemporary multi-core processors and system-on-chip (SoC) for wearable electronics and IoT applications is growing. Intensive data processing in such processors and SoCs necessitates larger on-chip, energy-efficient static random access memory (SRAM). However, there are several challenges associated with low-voltage SRAMs. In this paper we have discussed the major hurdles at technology front for low power and robust SRAM design. We have discussed the different circuit techniques to mitigate these severe reliability concerns for embedded SRAM. Furthermore, this paper presented the recent development in embedded memory technology targeted to efficient computation. We have analyzed the effect of various device sizing on memory stability. The novel current mode circuit is also presented for high speed, offset tolerant SRAM sense amplifier. The Fin FET memory design is explored to reduce the external manifestation of device mismatch on SRAM stability and memory yield. © 2015 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceProceedings - 2015 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2015en_US
dc.subjectAmplifiers (electronic)en_US
dc.subjectApplication specific integrated circuitsen_US
dc.subjectComputational efficiencyen_US
dc.subjectData handlingen_US
dc.subjectEnergy efficiencyen_US
dc.subjectInformation systemsen_US
dc.subjectIntegrated circuit designen_US
dc.subjectLogic designen_US
dc.subjectMemory architectureen_US
dc.subjectNanoelectronicsen_US
dc.subjectProgrammable logic controllersen_US
dc.subjectRandom access storageen_US
dc.subjectReconfigurable hardwareen_US
dc.subjectSystem-on-chipen_US
dc.subjectEfficient computationen_US
dc.subjectEmbedded memory technologiesen_US
dc.subjectinter die variationsen_US
dc.subjectintra die variationsen_US
dc.subjectLatch sense amplifiersen_US
dc.subjectOffseten_US
dc.subjectStatic random access memoryen_US
dc.subjectSystem on chips (SoC)en_US
dc.subjectStatic random access storageen_US
dc.titleNanoscale Memory Design for Efficient Computation: Trends, Challenges and Opportunityen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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