Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5382
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dc.contributor.authorAwasthi, Vishnu Kumaren_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:45Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:45Z-
dc.date.issued2014-
dc.identifier.citationAwasthi, V., Pandey, S. K., Sharma, P., Kumar, S., Mukherjee, C., & Mukherjee, S. (2014). Characterizations of DIBS sputtered ga-doped MgZnO thin films for solar cell application. Paper presented at the International Conference on Fibre Optics and Photonics, 2014, doi:10.1364/photonics.2014.t3a.76en_US
dc.identifier.isbn9781557528827-
dc.identifier.otherEID(2-s2.0-85086055477)-
dc.identifier.urihttps://doi.org/10.1364/photonics.2014.t3a.76-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5382-
dc.description.abstractThe optical, electrical and crystalline properties of Ga-doped MgZnO thin films grown by dual ion beam sputtering, at different substrate temperature (200-600oC), are studied for utilising it as TCO in CIGSe thin film solar cell. © OSA 2014.en_US
dc.language.isoenen_US
dc.publisherOptical Society of America (OSA)en_US
dc.sourceInternational Conference on Fibre Optics and Photonics, 2014en_US
dc.subjectGallium alloysen_US
dc.subjectIon beamsen_US
dc.subjectMagnesium alloysen_US
dc.subjectPhotonicsen_US
dc.subjectSemiconductor alloysen_US
dc.subjectSputteringen_US
dc.subjectThin film solar cellsen_US
dc.subjectZinc alloysen_US
dc.subjectCrystalline propertiesen_US
dc.subjectDifferent substratesen_US
dc.subjectDual ion beam sputteringen_US
dc.subjectGa-dopeden_US
dc.subjectMgZnO thin filmen_US
dc.subjectSolar-cell applicationsen_US
dc.subjectThin filmsen_US
dc.titleCharacterizations of DIBS sputtered ga-doped MgZnO thin films for solar cell applicationen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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