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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5400
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dc.contributor.authorAwasthi, Vishnu Kumaren_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:50Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:50Z-
dc.date.issued2014-
dc.identifier.citationAwasthi, V., Pandey, S. K., Sharma, P., Kumar, S. I., Mukherjee, C., & Mukherjee, S. (2014). Characterizations of DIBS sputtered ga-doped MgZnO thin films for solar cell application. Paper presented at the Proceedings 12th International Conference on Fiber Optics and Photonics, Photonics 2014.en_US
dc.identifier.otherEID(2-s2.0-84983168919)-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5400-
dc.description.abstractThe optical, electrical and crystalline properties of Ga-doped MgZnO thin films grown by dual ion beam sputtering, at different substrate temperature (200-600oC), are studied for utilising it as TCO in CIGSe thin film solar cell. © OSA 2014.en_US
dc.language.isoenen_US
dc.publisherOptical Society of America (OSA)en_US
dc.sourceProceedings 12th International Conference on Fiber Optics and Photonics, Photonics 2014en_US
dc.subjectGallium alloysen_US
dc.subjectIon beamsen_US
dc.subjectPhotonicsen_US
dc.subjectSolar cellsen_US
dc.subjectSputteringen_US
dc.subjectCrystalline propertiesen_US
dc.subjectDifferent substratesen_US
dc.subjectDual ion beam sputteringen_US
dc.subjectGa-dopeden_US
dc.subjectMgZnO thin filmen_US
dc.subjectSolar-cell applicationsen_US
dc.subjectThin film solar cellsen_US
dc.subjectThin filmsen_US
dc.titleCharacterizations of DIBS sputtered Ga-doped MgZnO thin films for solar cell applicationen_US
dc.typeConference Paperen_US
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