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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5409
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dc.contributor.authorKushwaha, C. B.en_US
dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:52Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:52Z-
dc.date.issued2014-
dc.identifier.citationKushwah, C. B., Vishvakarma, S. K., & Dwivedi, D. (2014). Single-ended sub-threshold FinFET 7T SRAM cell without boosted supply. Paper presented at the ICICDT 2014 - IEEE International Conference on Integrated Circuit Design and Technology, doi:10.1109/ICICDT.2014.6838593en_US
dc.identifier.isbn9781479921539-
dc.identifier.otherEID(2-s2.0-84904205404)-
dc.identifier.urihttps://doi.org/10.1109/ICICDT.2014.6838593-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5409-
dc.description.abstractThe proposed novel FinFET 7T cell involves the breaking-up of feedback between the true storing nodes that enhances the writability of the cell at ultra-low voltage (ULV) power supply without boosted supply and write assist at 20nm technology node. Proposed 7T achieves improved hold static noise margin (HSNM) as compared to the conventional upsized 5T(U5T) cell. The write trip point (WTP) is 16.2% lower than the U5T WTP at 100mV. The read power consumption is reduced by 13.7% with similar write power consumption of U5T. The read decoupling and feedback cutting makes proposed 7T more immune to process variations in sub-threshold regime. © 2014 IEEE.en_US
dc.language.isoenen_US
dc.publisherIEEE Computer Societyen_US
dc.sourceICICDT 2014 - IEEE International Conference on Integrated Circuit Design and Technologyen_US
dc.subjectStatic random access storageen_US
dc.subjectFinFETen_US
dc.subjectHSNMen_US
dc.subjectSubthresholden_US
dc.subjectUltra-low poweren_US
dc.subjectwritabilityen_US
dc.subjectWTPen_US
dc.subjectIntegrated circuitsen_US
dc.titleSingle-ended sub-threshold FinFET 7T SRAM cell without boosted supplyen_US
dc.typeConference Paperen_US
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