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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5419
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dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:54Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:54Z-
dc.date.issued2013-
dc.identifier.citationVijayvargiya, V., & Vishvakarma, S. (2013). Effect of doping profile on tunneling field effect transistor performance. Paper presented at the Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, 195-198. doi:10.1109/CDE.2013.6481376en_US
dc.identifier.isbn9781467346689-
dc.identifier.otherEID(2-s2.0-84875690902)-
dc.identifier.urihttps://doi.org/10.1109/CDE.2013.6481376-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5419-
dc.description.abstractTunneling field effect transistor (TFETs) has recently attracted considerable interest because of their potential use in low power logic application. In this paper, we have investigated the effect of uniform doping versus varying doping (Gaussian) profile on TFET performance. We have shown that off-state current and subthreshold slope (SS) in the TFET can be improved by using low doping profile at channel-drain junction. It provides an improved ION/IoFF and subthreshold slope of 1010 and 47 mV/dec respectively. Also by placing small high density layer in the channel near source-channel junction improve the SS to 43 mV/dec and Ion current by a few order. Finally, it is shown that ambipolar behavior is also reduced. © 2013 IEEE.en_US
dc.language.isoenen_US
dc.sourceProceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013en_US
dc.subjectAmbipolar behavioren_US
dc.subjectDoping profilesen_US
dc.subjectEffect of dopingen_US
dc.subjectGaussian profilesen_US
dc.subjectHigh density layersen_US
dc.subjectOff-state currenten_US
dc.subjectSubthreshold slopeen_US
dc.subjectTunneling field-effect transistorsen_US
dc.subjectDrain currenten_US
dc.subjectElectron devicesen_US
dc.subjectField effect transistorsen_US
dc.titleEffect of doping profile on tunneling field effect transistor performanceen_US
dc.typeConference Paperen_US
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