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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5420
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dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:54Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:54Z-
dc.date.issued2013-
dc.identifier.citationPandey, S. K., & Mukherjee, S. (2013). Device modeling and optimization of high-performance thin film CIGS solar cell with MgxZn1-xO buffer layer. Paper presented at the Proceedings - Winter Simulation Conference, 353-356. doi:10.1109/INEC.2013.6466045en_US
dc.identifier.isbn9781467348416-
dc.identifier.issn0891-7736-
dc.identifier.otherEID(2-s2.0-84874783707)-
dc.identifier.urihttps://doi.org/10.1109/INEC.2013.6466045-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5420-
dc.description.abstractA comprehensive device modeling for thin film CIGS-based solar cell with MgZnO buffer layer has been performed. The effects of thickness, doping, and alloy composition of various device constituent layers are extensively studied while optimizing device performance of the solar cell at room temperature. In this study, a maximum power conversion efficiency of 21.4% is achieved with performance parameters of 1.2V for open circuit voltage (Voc), 34.8 mA/cm2 of short circuit current density (Jsc) and a fill factor of 85.7%. Different aspects of constituent layer parameters thickness, doping, and alloy composition calibrations has been considered to identify the optimization criteria for the design of CIGS based solar cell. © 2013 IEEE.en_US
dc.language.isoenen_US
dc.sourceProceedings - Winter Simulation Conferenceen_US
dc.subjectAlloy compositionsen_US
dc.subjectCIGSen_US
dc.subjectCIGS solar cellsen_US
dc.subjectDeep defectsen_US
dc.subjectDevice modelingen_US
dc.subjectDevice performanceen_US
dc.subjectEffects of thicknessen_US
dc.subjectFill factoren_US
dc.subjectLayer parametersen_US
dc.subjectMaximum poweren_US
dc.subjectOptimization criteriaen_US
dc.subjectPerformance parametersen_US
dc.subjectPhotovoltaicen_US
dc.subjectRoom temperatureen_US
dc.subjectAlloyingen_US
dc.subjectBuffer layersen_US
dc.subjectConversion efficiencyen_US
dc.subjectModelsen_US
dc.subjectNanoelectronicsen_US
dc.subjectOpen circuit voltageen_US
dc.subjectSolar cellsen_US
dc.subjectThin filmsen_US
dc.subjectOptimizationen_US
dc.titleDevice modeling and optimization of high-performance thin film CIGS solar cell with MgxZn1-xO buffer layeren_US
dc.typeConference Paperen_US
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