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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5432
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dc.contributor.authorVerma, Shrutien_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:57Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:57Z-
dc.date.issued2012-
dc.identifier.citationPandey, S. K., Verma, S., Pandey, S. K., & Mukherjee, S. (2012). High performance from ZnO multiple quantum-well green light emitting diode with li-doped CdZnO active region. Paper presented at the Proceedings of the IEEE Conference on Nanotechnology, doi:10.1109/NANO.2012.6321915en_US
dc.identifier.isbn9781467321983-
dc.identifier.issn1944-9399-
dc.identifier.otherEID(2-s2.0-84869194047)-
dc.identifier.urihttps://doi.org/10.1109/NANO.2012.6321915-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5432-
dc.description.abstractA comprehensive theoretical study of Cd0.4Zn0.6O/ZnO multiple quantum-well (MQW) based light emitting diode (LED) is performed using a commercial TCAD simulation software. A device internal quantum efficiency (IQE) of 94% is achieved at room temperature from such LED that, emanates at 510 nm wavelength with a turn-on voltage of 3.1 V. The effects of thickness, doping, and alloy composition of various device constituent layers are comprehensively studied while optimizing the device performance at room temperature. It is also observed that electroluminescence (EL) intensity increased by a factor of 1.25 Li doping (doping concentration=1×10 18 cm3) of CdZnO well region, possibly due to the strain-induced piezoelectric polarization and spontaneous polarization reduction caused by Li ferroelectric dipole moment. © 2012 IEEE.en_US
dc.language.isoenen_US
dc.sourceProceedings of the IEEE Conference on Nanotechnologyen_US
dc.subjectActive regionsen_US
dc.subjectAlloy compositionsen_US
dc.subjectCdZnOen_US
dc.subjectDevice performanceen_US
dc.subjectDoping concentrationen_US
dc.subjectFerroelectric dipolesen_US
dc.subjectGreen light emitting diodesen_US
dc.subjectInternal quantum efficiencyen_US
dc.subjectMgZnOen_US
dc.subjectPiezoelectric polarizationsen_US
dc.subjectRoom temperatureen_US
dc.subjectSpontaneous polarizationsen_US
dc.subjectTCAD simulationen_US
dc.subjectTheoretical studyen_US
dc.subjectWell regionen_US
dc.subjectZnOen_US
dc.subjectComputer softwareen_US
dc.subjectDiodesen_US
dc.subjectElectroluminescenceen_US
dc.subjectNanotechnologyen_US
dc.subjectPolarizationen_US
dc.subjectQuantum efficiencyen_US
dc.subjectZinc oxideen_US
dc.subjectLight emitting diodesen_US
dc.titleHigh performance from ZnO multiple quantum-well green light emitting diode with Li-doped CdZnO active regionen_US
dc.typeConference Paperen_US
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