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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5440
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dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:42:00Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:42:00Z-
dc.date.issued2012-
dc.identifier.citationSharma, D., & Vishvakarma, S. K. (2012). Isomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFET. Paper presented at the 2012 International Conference on Emerging Electronics, ICEE 2012, doi:10.1109/ICEmElec.2012.6636261en_US
dc.identifier.isbn9781467331364-
dc.identifier.otherEID(2-s2.0-84890870165)-
dc.identifier.urihttps://doi.org/10.1109/ICEmElec.2012.6636261-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5440-
dc.description.abstractWe present an analytical model of 3D potential distribution for surrounding-gate (SurG) gate-all-around (GAA) MOSFET. The model is based on solution of Laplace's and Poisson's equations, where isomorphic polynomial functions are used to describe the potential distribution. The short channel effects are precisely accounted for by introducing z dependent characteristic length. From this, the device electrostatics can be calculated in the full range of bias voltage. The model compares well with numerical calculations obtained from the 3D ATLAS device simulator. © 2012 IEEE.en_US
dc.language.isoenen_US
dc.publisherIEEE Computer Societyen_US
dc.source2012 International Conference on Emerging Electronics, ICEE 2012en_US
dc.subjectAnalytical modelsen_US
dc.subjectDissociationen_US
dc.subjectElectrostaticsen_US
dc.subjectMOSFET devicesen_US
dc.subjectATLAS device simulatorsen_US
dc.subjectCharacteristic lengthen_US
dc.subjectDependent characteristicsen_US
dc.subjectGate-all-around MOSFETen_US
dc.subjectMultiple gatesen_US
dc.subjectPotential distributionsen_US
dc.subjectShort-channel effecten_US
dc.subjectSurrounding-gateen_US
dc.subjectThree dimensionalen_US
dc.titleIsomorphic polynomial based precise analytical modeling of 3D potential distribution for surrounding gate gate-all-around MOSFETen_US
dc.typeConference Paperen_US
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