Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5479
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dc.contributor.authorAgrawal, Rajanen_US
dc.contributor.authorJyoti Kumarien_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:42:10Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:42:10Z-
dc.date.issued2021-
dc.identifier.citationKumar, S., Agrawal, R., Das, M., Jyoti, K., Kumar, P., & Mukherjee, S. (2021). Analytical model for memristive systems for neuromorphic computation. Journal of Physics D: Applied Physics, 54(35) doi:10.1088/1361-6463/ac07dden_US
dc.identifier.issn0022-3727-
dc.identifier.otherEID(2-s2.0-85109176685)-
dc.identifier.urihttps://doi.org/10.1088/1361-6463/ac07dd-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5479-
dc.description.abstractFrom the last decade, the development of a generic model for memristive systems which simulates the biologically inspired nervous system of living beings, is one of the most attracting aspects. More specifically, the develop generic model has capability to resolve the problems in the field of artificial neural network. Here, a generic, non-linear analytical memristive model, which is based on interfacial switching mechanism, has been discussed. The proposed model has the capability to simulate the high-density neural network of biological synapses that regulates the communication efficacy among neurons and can implement the learning capability of the neurons. Further, the proposed model is the parallel connection of the rectifier and memristor which shows better non-linear profile along with non-ideal effects and rectifying nature in its pinched hysteresis loop in the resistive switching characteristics. Moreover, proposed model shows the significant low value of maximum error deviation ∼4.44% for Y2O3-based and ∼4.5% for WO3-based memristive systems, respectively in its neuromorphic characteristics with respect to the corresponding experimental results. Therefore, the proposed analytical memristive model can be utilized to develop the memristive system for real-world applications based on neuromorphic behaviors of any transition metal oxide-based memristive systems. © 2021 IOP Publishing Ltd.en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltden_US
dc.sourceJournal of Physics D: Applied Physicsen_US
dc.subjectAnalytical modelsen_US
dc.subjectBiomimeticsen_US
dc.subjectElectric connectorsen_US
dc.subjectElectric rectifiersen_US
dc.subjectMemristorsen_US
dc.subjectTransition metal oxidesen_US
dc.subjectTransition metalsen_US
dc.subjectTungsten compoundsen_US
dc.subjectBiological synapsisen_US
dc.subjectBiologically inspireden_US
dc.subjectLearning capabilitiesen_US
dc.subjectMemristive systemsen_US
dc.subjectNonideal effectsen_US
dc.subjectParallel connectionsen_US
dc.subjectResistive switchingen_US
dc.subjectSwitching mechanismen_US
dc.subjectNeural networksen_US
dc.titleAnalytical model for memristive systems for neuromorphic computationen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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