Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5482
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dc.contributor.authorYadav, Nidhien_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:42:11Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:42:11Z-
dc.date.issued2021-
dc.identifier.citationYadav, N., Kumari, N., Ando, Y., Pandey, S. S., & Singh, V. (2021). Development of high-sensitivity poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) thin-film-based phototransistors by the ribbon-floating film transfer method. Physica Status Solidi - Rapid Research Letters, 15(8) doi:10.1002/pssr.202100185en_US
dc.identifier.issn1862-6254-
dc.identifier.otherEID(2-s2.0-85108951434)-
dc.identifier.urihttps://doi.org/10.1002/pssr.202100185-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5482-
dc.description.abstractAlignment of polymer chains holds the key to the development of highly functional polymer-based field-effect transistors (FETs). The recently developed ribbon-floating film transfer method (ribbon-FTM) has the potential for development of polymer thin films with highly aligned chains, which are desirable for fabrication of efficient planar devices. These thin films consisting of well-aligned polymer chains exhibit high degree of optical and electronic anisotropies. Herein, ribbon-FTM-processed thin-film-based organic photosensitive transistors of poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) (PFO-DBT) are reported. Under optimized fabrication conditions, polymer FETs based on PFO-DBT demonstrate a charge carrier mobility of 0.002 cm2 V−1 s−1 and an on–off ratio of 5 × 104 under dark conditions. The devices further demonstrate a photosensitivity of ≈104 and 103 and a high responsivity of 8.37 and 4.6 A W−1 against green and red light illuminations, respectively. The results hold promise for the development of conducting-polymer-based high-performance photosensitive organic field-effect transistors (OFETs). © 2021 Wiley-VCH GmbHen_US
dc.language.isoenen_US
dc.publisherJohn Wiley and Sons Incen_US
dc.sourcePhysica Status Solidi - Rapid Research Lettersen_US
dc.subjectConducting polymersen_US
dc.subjectHall mobilityen_US
dc.subjectHole mobilityen_US
dc.subjectLight sensitive materialsen_US
dc.subjectOrganic compoundsen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectPhotosensitivityen_US
dc.subjectPolymer filmsen_US
dc.subjectThin film circuitsen_US
dc.subject9 ,9-dioctylfluoreneen_US
dc.subjectDark conditionsen_US
dc.subjectElectronic anisotropyen_US
dc.subjectField effect transistor (FETs)en_US
dc.subjectHigh sensitivityen_US
dc.subjectPhotosensitive transistorsen_US
dc.subjectPlanar devicesen_US
dc.subjectPolymer thin filmsen_US
dc.subjectThin filmsen_US
dc.titleDevelopment of High-Sensitivity Poly(2,7-(9,9-dioctylfluorene)-alt-5,5-(4′,7′-di-2-thienylbenzo [c][1,2,5]thiadiazole)) Thin-Film-Based Phototransistors by the Ribbon-Floating Film Transfer Methoden_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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