Investigation of DIBS-Deposited CdZnO/ZnO-Based Multiple Quantum Well for Large-Area Photovoltaic Application

Abstract

Multiple quantum wells (MQWs) of CdZnO/ZnO are realized, for the first time, by dual ion beam sputtering (DIBS) system at different deposition conditions in terms of ion beam power, substrate temperature, and time cessation between deposition of successive layers. The effects of DIBS deposition conditions are analyzed by secondary ion mass spectroscopy (SIMS) and high-resolution transmission electron microscopy (HRTEM) and discussed systematically. The SIMS analysis has been used for depth profiling of CdZnO/ZnO-based MQWs structure. The deposition of CdZnO/ZnO-based MQW structure performed at 100 °C with time cessation of 30 min between successive layer growth and ion beam power of 14 W has displayed the best results in terms of distinct well and barrier layers formation. This work also includes an analytical study of CdZnO/ZnO-based MQW solar cell (MQWSC), in which a study is performed for solar irradiance dependence of performance parameters to explore the potential use of CdZnO/ZnO-based MQWSC for concentrator solar cell (SC). The short-circuit current density increases from 0.12 to 57.98 mA/cm2, the open-circuit voltage rises from 2.60 to 2.77 V, and the photon conversion efficiency is from 2.85% to 3.04%, as solar irradiance increases from 0.1 to 50 suns. The results show that the performance of SCs can be improved by using concentrators and also explore the possibility of efficiently absorbing short-wavelength photons. © 1963-2012 IEEE.