Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5661
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dc.contributor.authorTripathi, Akashen_US
dc.contributor.authorAgrawal, Jiteshen_US
dc.contributor.authorDixit, Tejendraen_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:43:07Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:43:07Z-
dc.date.issued2020-
dc.identifier.citationTripathi, A., Agrawal, J., Dixit, T., & Singh, V. (2020). Trap assisted persistent photo-conductivity in solution-processed CuO thin film. IEEE Journal of Quantum Electronics, 56(1) doi:10.1109/JQE.2019.2952385en_US
dc.identifier.issn0018-9197-
dc.identifier.otherEID(2-s2.0-85077361825)-
dc.identifier.urihttps://doi.org/10.1109/JQE.2019.2952385-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5661-
dc.description.abstractOptically induced meta-stable states in the semiconductor lattice temporarily change the conductivity which leads to a phenomenon called persistent photo-conductivity (PPC). We report a PPC effect with long retention time of more than 90 h in solution-processed highly transparent CuO thin film. A 254 nm wavelength light source was used to 'set' and thermal annealing at 50°C for 10 minutes and NIR illumination was used to reset PPC effect. Activated trap states without any stimulus which are responsible for PPC effect in CuO thin film has, been investigated by performing temperature-dependent I-V characterization. These trapped charges are released either on heating or illumination with NIR light source. Such a long-enduring PPC achieved in low-cost transparent CuO thin film could pave the way for further study of the feasibility of optically defined, transparent electronics. © 2019 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Journal of Quantum Electronicsen_US
dc.subjectCopper oxidesen_US
dc.subjectImage processingen_US
dc.subjectInfrared devicesen_US
dc.subjectLight sourcesen_US
dc.subjectThin film circuitsen_US
dc.subjectThin film devicesen_US
dc.subjectIV characterizationen_US
dc.subjectPersistent Photoconductivityen_US
dc.subjectSemiconductor latticesen_US
dc.subjectSolution processen_US
dc.subjectSolution-processeden_US
dc.subjectTemperature dependenten_US
dc.subjectTransparent electronicsen_US
dc.subjectTrap stateen_US
dc.subjectThin filmsen_US
dc.titleTrap Assisted Persistent Photo-Conductivity in Solution-Processed CuO Thin Filmen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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