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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dixit, Tejendra | en_US |
dc.contributor.author | Agrawal, Jitesh | en_US |
dc.contributor.author | Singh, Vipul | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-17T15:43:17Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-17T15:43:17Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Dixit, T., Agrawal, J., Muralidhar, M., Murakami, M., Ganapathi, K. L., Singh, V., & Rao, M. S. R. (2019). Exciton lasing in ZnO-ZnCr2O4 nanowalls. IEEE Photonics Journal, 11(6) doi:10.1109/JPHOT.2019.2945010 | en_US |
dc.identifier.issn | 1943-0655 | - |
dc.identifier.other | EID(2-s2.0-85078026109) | - |
dc.identifier.uri | https://doi.org/10.1109/JPHOT.2019.2945010 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5686 | - |
dc.description.abstract | We demonstrate low power continuous wave, red and NIR exciton lasing with FWHM of 1 nm, quality factor of 680 and threshold power of 100 μW in ZnO-ZnCr2O4 nanowalls. The NIR lasing was enabled by integrating ZnO with ZnCr2O4. Moreover, wavelength selective photoluminescence (tuning from UV to NIR) and enhanced two-photon emission were also observed in ZnO-ZnCr2O4 nanowalls. The exciton-exciton scattering can be attributed to the observation of exciton lasing at low temperature (<200 K). A plausible mechanism has been elucidated in order to explain the results. This work will open new opportunities in the advancement of oxide semiconductors based exciton lasers. © 2009-2012 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
dc.source | IEEE Photonics Journal | en_US |
dc.subject | Chromium compounds | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | Infrared devices | en_US |
dc.subject | Oxide semiconductors | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Photoluminescence spectroscopy | en_US |
dc.subject | Temperature | en_US |
dc.subject | Wide band gap semiconductors | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Band transitions | en_US |
dc.subject | Exciton-exciton scattering | en_US |
dc.subject | Low temperatures | en_US |
dc.subject | Plasmon coupling | en_US |
dc.subject | Plausible mechanisms | en_US |
dc.subject | Threshold power | en_US |
dc.subject | Two-photon emission | en_US |
dc.subject | Wavelength-selective | en_US |
dc.subject | Excitons | en_US |
dc.title | Exciton Lasing in ZnO-ZnCr2O4 Nanowalls | en_US |
dc.type | Journal Article | en_US |
dc.rights.license | All Open Access, Gold | - |
Appears in Collections: | Department of Electrical Engineering |
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