Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5712
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dc.contributor.authorKumar, Ashishen_US
dc.contributor.authorAgrawal, Jiteshen_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:43:26Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:43:26Z-
dc.date.issued2019-
dc.identifier.citationKumar, A., Agrawal, J., Sharma, A. K., Singh, V., & Agarwal, A. (2019). A cost-effective and facile approach for realization of black silicon nanostructures on flexible substrate. Journal of Materials Science: Materials in Electronics, 30(17), 16554-16561. doi:10.1007/s10854-019-02032-2en_US
dc.identifier.issn0957-4522-
dc.identifier.otherEID(2-s2.0-85071166735)-
dc.identifier.urihttps://doi.org/10.1007/s10854-019-02032-2-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5712-
dc.description.abstractIn this paper, we report a cost effective and facile approach to produce uniform nanostructural black silicon over large-area by metal assist chemical etching followed by its transfer over pressure sensitive flexible substrate. Structural and optical properties of black silicon over flexible substrate were investigated. Field emission scanning electronic microscope (FESEM) reveals textured surface and dense morphology of silicon nanostructures; that appeared to be black. An intense and broadband UV and Visible photoluminescence spectra from these nanostructures was observed and suggested the optically active nature of black silicon. Broadening and asymmetric shifting of Raman line shape, corresponding to black silicon, confirmed quantum confinement of phonon. The crystal sizes of silicon (Si) nanostructures calculated using frequency shift in Raman spectra analytical model were 3.4 nm to 4.7 nm. Significant reduction of reflection below (1%) over the wide UV–Vis spectrum was recorded due to presence of textured surface as observed by FESEM. The present work aids our understanding of tuning the optical properties of black silicon and its’ realization on flexible substrate could be beneficial for flexible electronics including bio-sensing and optoelectronics devices. More interestingly low reflectance of black silicon could pave the way for realization of highly efficient flexible solar cells. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.sourceJournal of Materials Science: Materials in Electronicsen_US
dc.subjectCost effectivenessen_US
dc.subjectEtchingen_US
dc.subjectFlexible electronicsen_US
dc.subjectMorphologyen_US
dc.subjectNanostructuresen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSiliconen_US
dc.subjectTexturesen_US
dc.subjectField emission scanningen_US
dc.subjectFlexible solar cellsen_US
dc.subjectFlexible substrateen_US
dc.subjectOptoelectronics devicesen_US
dc.subjectRaman line shapesen_US
dc.subjectSilicon nano structuresen_US
dc.subjectStructural and optical propertiesen_US
dc.subjectVisible photoluminescenceen_US
dc.subjectSubstratesen_US
dc.titleA cost-effective and facile approach for realization of black silicon nanostructures on flexible substrateen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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