Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5754
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dc.contributor.authorAgrawal, Jiteshen_US
dc.contributor.authorDixit, Tejendraen_US
dc.contributor.authorPalani, Anand Iyamperumalen_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:43:42Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:43:42Z-
dc.date.issued2019-
dc.identifier.citationAgrawal, J., Dixit, T., Palani, I. A., & Singh, V. (2019). Systematic investigations on the effect of prolong UV illumination on optoelectronic properties of ZnO honeycomb nanostructures. Scripta Materialia, 163, 1-4. doi:10.1016/j.scriptamat.2018.12.029en_US
dc.identifier.issn1359-6462-
dc.identifier.otherEID(2-s2.0-85059149335)-
dc.identifier.urihttps://doi.org/10.1016/j.scriptamat.2018.12.029-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5754-
dc.description.abstractHerein, the effect of prolong UV illumination over ZnO optoelectronic characteristics has been investigated. The photoluminescence analysis has shown significant enhancement in deep level emission (DLE) after sample being exposed to UV radiations. The formation of photo-induced oxygen vacancies (VO) over the ZnO surface was found to be responsible for such noteworthy enhancement in DLE. The observed phenomenon was further utilized for controlled incorporation of VO in ZnO via UV illumination, towards obtaining optimal device performance. The UV treated photo-detector has shown significantly high photo-responsivity and photo-sensitivity in the deep UV region. © 2018en_US
dc.language.isoenen_US
dc.publisherActa Materialia Incen_US
dc.sourceScripta Materialiaen_US
dc.subjectCrystal defectsen_US
dc.subjectCrystal symmetryen_US
dc.subjectHoneycomb structuresen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectPhotodetectorsen_US
dc.subjectZinc oxideen_US
dc.subjectDeep level emissionen_US
dc.subjectDeep uven_US
dc.subjectOptimal devicesen_US
dc.subjectOptoelectronic characteristicsen_US
dc.subjectOptoelectronic propertiesen_US
dc.subjectPhotoluminescence analysisen_US
dc.subjectPhotoresponsivityen_US
dc.subjectUV illuminationsen_US
dc.subjectImage enhancementen_US
dc.titleSystematic investigations on the effect of prolong UV illumination on optoelectronic properties of ZnO honeycomb nanostructuresen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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