Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs with Underlap

Abstract

This paper proposes a semianalytical model to estimate short-channel effects for independent gate operation in double-gate (DG) junctionless (JL) MOSFET incorporating gate-to-source/drain underlap, through the solution of Poisson's equations in the subthreshold regime. The model also accounts for the asymmetry in device operation through variation in gate oxide thicknesses, gate work functions, and underlap lengths. Subthreshold drain current, threshold voltage, and subthreshold swing, evaluated from the channel potential, show reasonable agreement with simulation data. Results suggest the use of negative back gate bias and longer underlap length to reduce off-current. This paper highlights the role of doping, underlap length, and back gate bias in tuning the threshold voltage. This model serves as a generic formulation (within limits) with different asymmetries to estimate, design, and optimize self-aligned DG JL transistors for subthreshold logic applications. © 1963-2012 IEEE.