Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5856
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dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:44:23Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:44:23Z-
dc.date.issued2018-
dc.identifier.citationSingh, S., Raj, B., & Vishvakarma, S. K. (2018). Analytical modeling of split-gate junction-less transistor for a biosensor application. Sensing and Bio-Sensing Research, 18, 31-36. doi:10.1016/j.sbsr.2018.02.001en_US
dc.identifier.issn2214-1804-
dc.identifier.otherEID(2-s2.0-85042662177)-
dc.identifier.urihttps://doi.org/10.1016/j.sbsr.2018.02.001-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5856-
dc.description.abstractThis paper represents the analytical modeling of split-gate Dielectric Modulated Junction Less Transistor (JLT) for label free electrical detection of bio molecules. Some part of the channel region is opened for providing the binding sites for the bio molecules unlike conventional MOSFET which is enclosed with the gate electrode. Due to this open area, the surface potential of this region affected by the charged and neutral bio molecules immobilized to the open region of channel. Surface potential of the channel region obtained by solving two-Dimensional Poisson's equation by potential profile having parabolic nature through channel region using technique called conformal mapping. By deriving the surface potential model, derivation of threshold model can also be done. For the detection of bio molecule, variation in to the threshold voltage due to binding of bio molecule in the gate underlap region is the sensing metric. © 2018en_US
dc.language.isoenen_US
dc.publisherElsevier B.V.en_US
dc.sourceSensing and Bio-Sensing Researchen_US
dc.titleAnalytical modeling of split-gate junction-less transistor for a biosensor applicationen_US
dc.typeJournal Articleen_US
dc.rights.licenseAll Open Access, Gold-
Appears in Collections:Department of Electrical Engineering

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