Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5979
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:45:18Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:45:18Z-
dc.date.issued2017-
dc.identifier.citationDwivedi, P., & Kranti, A. (2017). Applicability of transconductance-to-current ratio (gm/Ids) as a sensing metric for tunnel FET biosensors. IEEE Sensors Journal, 17(4), 1030-1036. doi:10.1109/JSEN.2016.2640192en_US
dc.identifier.issn1530-437X-
dc.identifier.otherEID(2-s2.0-85014921242)-
dc.identifier.urihttps://doi.org/10.1109/JSEN.2016.2640192-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5979-
dc.description.abstractIn this paper, we propose and evaluate the feasibility of transconductance-to-current ratio (gm/Ids) as a sensing metric for a tunnel field-effect transistor (TFET)-based dielectric modulated biosensor. Focusing on the enhancement of the values of gm/Ids and current ratio at lower current levels to signify the presence of biomolecules in the dielectric cavity of TFET biosensor, the metric can be used not only for sensitivity but also for selectivity as the current ratio changes appreciably for the three different types of biomolecules, namely, Streptavidin, Biotin, and APTES. The gm/Ids extraction takes into account the operation at low power consumption, i.e., in the subthreshold region, which is most sensitive for biomolecule detection. The sensing methodology is governed by the location of the biomolecules within the cavity, and is less dependent on the fill-in factor. This paper highlights new opportunities to identify the sensing metric in TFET-based dielectric modulated biosensors. © 2016 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Sensors Journalen_US
dc.subjectBiomoleculesen_US
dc.subjectBiosensorsen_US
dc.subjectProteinsen_US
dc.subjectTransconductanceen_US
dc.subjectBiomolecule detectionen_US
dc.subjectCurrent levelsen_US
dc.subjectDielectric cavitiesen_US
dc.subjectLow-power consumptionen_US
dc.subjectSub-threshold regionsen_US
dc.subjectTransconductance-to-current ratioen_US
dc.subjectTunnel FETen_US
dc.subjectTunnel field effect transistoren_US
dc.subjectField effect transistorsen_US
dc.titleApplicability of Transconductance-to-Current Ratio (gm/Ids) as a Sensing Metric for Tunnel FET Biosensorsen_US
dc.typeJournal Articleen_US
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