Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5995
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dc.contributor.authorShah, Ambika Prasaden_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:45:25Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:45:25Z-
dc.date.issued2017-
dc.identifier.citationShah, A. P., Jain, R. K., & Neema, V. (2017). A novel energy efficient high-speed 10-transistor full adder cell based on pass transistor logic. Journal of Nanoelectronics and Optoelectronics, 12(5), 499-504. doi:10.1166/jno.2017.2030en_US
dc.identifier.issn1555-130X-
dc.identifier.otherEID(2-s2.0-85018777741)-
dc.identifier.urihttps://doi.org/10.1166/jno.2017.2030-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5995-
dc.description.abstractIn this paper a new design of 10-T one bit full adder based on Pass Transistor Logic has been proposed with an improved performance in terms of area utilization, power dissipation, and delay characteristics. All the simulations are performed on 70 nm technology node using Tanner EDA tool with supply voltage of 0.9 V. The proposed 10-T Full Adder circuit has average improvement of 68.45%, 68.45%, 89.44%, 66.3% and 66.29% in leakage current, static power, static energy, Dynamic PDP and dynamic EDP respectively as compared to SERF 10-T full adder circuit. Proposed circuit has also improvement in speed by 66.55% as compared to SERF 10T full adder circuit with 25% less area requirement. Copyright © 2017 by American Scientific Publishers.en_US
dc.language.isoenen_US
dc.publisherAmerican Scientific Publishersen_US
dc.sourceJournal of Nanoelectronics and Optoelectronicsen_US
dc.titleA novel energy efficient high-speed 10-transistor full adder cell based on pass transistor logicen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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