Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/6074
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dc.contributor.authorDixit, Tejendraen_US
dc.contributor.authorPalani, Anand Iyamperumalen_US
dc.contributor.authorSingh, Vipulen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:46:04Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:46:04Z-
dc.date.issued2015-
dc.identifier.citationBilgaiyan, A., Dixit, T., Palani, I. A., & Singh, V. (2015). Improved photoresponse of hybrid ZnO/P3HT bilayered photodetector obtained through oriented growth of ZnO nanorod arrays and the use of hole injection layer. Journal of Electronic Materials, 44(8), 2842-2848. doi:10.1007/s11664-015-3712-xen_US
dc.identifier.issn0361-5235-
dc.identifier.otherEID(2-s2.0-84933670355)-
dc.identifier.urihttps://doi.org/10.1007/s11664-015-3712-x-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/6074-
dc.description.abstractWe report highly oriented one-dimensional (1-D) growth of zinc oxide (ZnO) nanorod arrays (NRA) which were later utilized to fabricate hybrid photodiodes having the typical photodiode configuration of indium tin oxide (ITO)/ZnO/poly(3-hexylthiophene) (P3HT)/Ag. These functional hybrid bilayered photodiodes were found to have high rectification ratio under dark conditions and demonstrated enhanced responsivity under light illumination. Further, we studied the effect of an intermediate electron blocking layer of poly(ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) on the photodiode characteristics and demonstrated ITO/ZnO/P3HT/PEDOT:PSS/Ag photodiodes, reporting very high rectification ratio and responsivity in this bilayered configuration. The observed results are explained on the basis of the increased surface area of contact between the ZnO nanorods and the P3HT, and also the efficient hole injection into the P3HT layer from the top Ag electrode. © 2015, The Minerals, Metals & Materials Society.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.sourceJournal of Electronic Materialsen_US
dc.subjectCharge injectionen_US
dc.subjectConducting polymersen_US
dc.subjectElectric rectifiersen_US
dc.subjectElectron injectionen_US
dc.subjectNanorodsen_US
dc.subjectPhotodiodesen_US
dc.subjectTin oxidesen_US
dc.subjectElectron blocking layeren_US
dc.subjectHybrid photodiodesen_US
dc.subjectKMnO4en_US
dc.subjectP3HTen_US
dc.subjectPhotodiode configurationen_US
dc.subjectPolyethylenedioxythiopheneen_US
dc.subjectZinc oxide nanorod arraysen_US
dc.subjectZnOen_US
dc.subjectZinc oxideen_US
dc.titleImproved Photoresponse of Hybrid ZnO/P3HT Bilayered Photodetector Obtained Through Oriented Growth of ZnO Nanorod Arrays and the Use of Hole Injection Layeren_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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