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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/6159
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dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:46:49Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:46:49Z-
dc.date.issued2011-
dc.identifier.citationMukherjee, S., Li, D., Bi, G., Ma, J., Elizondo, S. L., Gautam, A., & Shi, Z. (2011). CaF2 surface passivation of lead selenide grown on BaF 2. Microelectronic Engineering, 88(3), 314-317. doi:10.1016/j.mee.2010.11.035en_US
dc.identifier.issn0167-9317-
dc.identifier.otherEID(2-s2.0-78650738916)-
dc.identifier.urihttps://doi.org/10.1016/j.mee.2010.11.035-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/6159-
dc.description.abstractA new method of surface passivation of PbSe epitaxial layers by growing a thin epitaxial CaF2 layer is proposed. Improvement in photoluminescence (PL) intensity is observed when the PbSe layer is passivated. The minority carrier lifetime (τ), measured by photo-current decay method corroborates PL measurements and shows a consistent, albeit not considerable, improvement in the lifetime of PbSe samples after surface passivation. The positive effect of surface passivation, especially at low heat-sink temperature, offered by a new passivating material is critically important for IV-VI material-based infrared detector and sensor applications. © 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoenen_US
dc.sourceMicroelectronic Engineeringen_US
dc.subjectCaF2 passivationen_US
dc.subjectCurrent decayen_US
dc.subjectLead saltsen_US
dc.subjectLead selenideen_US
dc.subjectMaterial-baseden_US
dc.subjectMinority carrier lifetimesen_US
dc.subjectPhotoluminescence intensitiesen_US
dc.subjectPL measurementsen_US
dc.subjectPositive effectsen_US
dc.subjectSensor applicationsen_US
dc.subjectSurface passivationen_US
dc.subjectCarrier lifetimeen_US
dc.subjectEpitaxial growthen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSaltsen_US
dc.subjectSensorsen_US
dc.subjectSurfacesen_US
dc.subjectPassivationen_US
dc.titleCaF2 surface passivation of lead selenide grown on BaF 2en_US
dc.typeJournal Articleen_US
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