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Title: | Parametric investigation of substrate temperatures on the properties of Zinc oxide deposited over a flexible polymeric substrate via spray technique |
Authors: | Pandey, Rajagopalan Gagrani, Rohit Singh, Vipul Palani, Anand Iyamperumal |
Keywords: | Characterization;Defects;Deposition;Descaling;Film growth;Manufacture;Pyrolysis;Schottky barrier diodes;Zinc oxide;Constant temperature;Flexible polyimide;Flexible polymeric substrates;IV characterization;Large-area deposition;Parametric investigations;Spray-pyrolysis techniques;Substrate temperature;Spray pyrolysis |
Issue Date: | 2016 |
Publisher: | Institute of Physics Publishing |
Citation: | Rajagopalan, P., Gagrani, R., Nakamura, D., Okada, T., Singh, V., & Palani, I. A. (2016). Parametric investigation of substrate temperatures on the properties of zinc oxide deposited over a flexible polymeric substrate via spray technique. Paper presented at the IOP Conference Series: Materials Science and Engineering, , 149(1) doi:10.1088/1757-899X/149/1/012069 |
Abstract: | Here we report the influence of substrate temperature (300-500 °C) on the deposition and growth of ZnO over a Flexible polyimide film. Owing to its simplicity, large area deposition capability and Cost effectivity Spray Pyrolysis technique was used. We have modified the conventional process of Spray pyrolysis by spraying for shorter durations and repeating the process which in turn reduced the Island formation of ZnO. Moreover, this technique helped in maintaining the constant temperature and uniformity during the deposition as prolonged spraying reduces the temperature of the heating plate drastically. Photoluminescence (PL) reveals that at 350 and 400° C the defect have reduced. XRD reveals the crystallinity and Impurities present. FE-SEM reveals the structure morphology changes with the change in the substrate temperature. TGA was done to ensure that substrate does not undergoes dissociation at high temperature. It was observed at the film deposited at 400 °C was found to be more uniform, defect free and crystalline. Hence, IV characterization of the film deposited at 400 °C was done which showed good rectification behaviour of the Schottky diodes. © Published under licence by IOP Publishing Ltd. |
URI: | https://doi.org/10.1088/1757-899X/149/1/012069 https://dspace.iiti.ac.in/handle/123456789/7411 |
ISSN: | 1757-8981 |
Type of Material: | Conference Paper |
Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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