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https://dspace.iiti.ac.in/handle/123456789/7413
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kumar, Sunil | en_US |
| dc.contributor.author | Shirage, Parasharam Maruti | en_US |
| dc.contributor.author | Sen, Somaditya | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:11:36Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:11:36Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | Srivastava, T., Bajpai, G., Kumar, S., Shirage, P., & Sen, S. (2014). Effect of si doping on optical & electrical property of ZnO. Paper presented at the Optics InfoBase Conference Papers, doi:10.1364/PHOTONICS.2016.W3A.88 | en_US |
| dc.identifier.isbn | 9781943580224 | - |
| dc.identifier.other | EID(2-s2.0-85019510241) | - |
| dc.identifier.uri | https://doi.org/10.1364/PHOTONICS.2016.W3A.88 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7413 | - |
| dc.description.abstract | Zn (1-x)SixO for x= 0, 0.041, 0.055 & 0.083 was synthesized by sol-gel method followed by solid state sintering. Quenching of defect state and increase in DC conductivity was observed till x= 0.055 (solubility limit). © OSA 2016. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | OSA - The Optical Society | en_US |
| dc.source | Optics InfoBase Conference Papers | en_US |
| dc.subject | Sintering | en_US |
| dc.subject | Sol-gel process | en_US |
| dc.subject | Sol-gels | en_US |
| dc.subject | Dc conductivity | en_US |
| dc.subject | Defect state | en_US |
| dc.subject | Si-doping | en_US |
| dc.subject | Solid state sintering | en_US |
| dc.subject | Solubility limits | en_US |
| dc.subject | Photonics | en_US |
| dc.title | Effect of Si doping on optical & electrical property of ZnO | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences | |
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