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Title: | A brief review of Bi2Se3 based topological insulator: From fundamentals to applications |
Authors: | Mazumder, Kushal Shirage, Parasharam Maruti |
Keywords: | Bismuth compounds;Electric insulators;Energy gap;Quantum Hall effect;Quantum theory;Single crystals;Surface states;Synthesis (chemical);Topological insulators;Bismuth selenide;Exotic materials;Insulator materials;Photo-detectors;Property;Quantum hall;Single Dirac cones;Synthesis techniques;Thin-films;Topological insulators;Selenium compounds |
Issue Date: | 2021 |
Publisher: | Elsevier Ltd |
Citation: | Mazumder, K., & Shirage, P. M. (2021). A brief review of Bi2Se3 based topological insulator: From fundamentals to applications. Journal of Alloys and Compounds, 888 doi:10.1016/j.jallcom.2021.161492 |
Abstract: | Topological Insulators are new classes of materials with insulating bulk but having gapless surface states. Integer Quantum Hall Effect, discovered in 1980 was the first property with topological association in topological insulators. For the last couple of decades different types of these exotic materials were foreseen, then revealed and fascinated the scientists due to their plethora of applications. Bi2Se3 is one of them with a single Dirac cone on its surface states and having the highest bulk band gap of 0.3 eV among all other topological insulator materials. While the transport properties of its single crystals are renowned, thin films are also causing equally sensational detections and very recently nanoparticles are also being used in some excellent innovations. In this manuscript, a review on the meticulous studies of Bi2Se3 is presented where different synthesis techniques; crystal structures; various physical properties and modern day applications were taken into concern. © 2021 Elsevier B.V. |
URI: | https://doi.org/10.1016/j.jallcom.2021.161492 https://dspace.iiti.ac.in/handle/123456789/7421 |
ISSN: | 0925-8388 |
Type of Material: | Review |
Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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