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Title: | Violet Emission of ALD-Grown ZnO Nanostructures on Confined Polymer Films: Defect Origins and Emission Control via Interface Engineering Based on Confinement of the Bottom Polymer Template |
Authors: | Mathur, Aakash Pal, Dipayan Singh, Ajaib K. Singh, Rinki S. Chattopadhyay, Sudeshna |
Keywords: | Atomic layer deposition;Defects;Emission control;Film thickness;Growth rate;Hybrid systems;II-VI semiconductors;Metallic films;Nanostructures;Optical films;Oxide films;Photoluminescence;Polystyrenes;Thin film circuits;Thin films;Zinc oxide;Degree of confinement;Interface effect;Interface engineering;Optoelectronic applications;Organic electronic devices;Organic electronics;Room-temperature photoluminescence;Simultaneous growth;Polymer films |
Issue Date: | 2019 |
Publisher: | Wiley-VCH Verlag |
Citation: | Mathur, A., Pal, D., Singh, A., Sengupta, A., Singh, R., & Chattopadhyay, S. (2019). Violet emission of ALD-grown ZnO nanostructures on confined polymer films: Defect origins and emission control via interface engineering based on confinement of the bottom polymer template. Macromolecular Chemistry and Physics, 220(5) doi:10.1002/macp.201800435 |
Abstract: | ZnO thin films on polymer templates (polystyrene, PST) show strong influence of the interface via degree of confinement of the bottom polymer template in introducing the controlled defect levels in the ZnO nanostructures and consequently yield significant variation at room temperature photoluminescence (PL). The thickness of the polymer thin film in terms of its radius of gyration (R g ) defines the degree of confinement of PST. Simultaneous growth of ZnO thin films by atomic layer deposition (ALD) with 150 cycles at 35 °C on spin-coated polystyrene (PS) films of different thicknesses forms sets of ZnO/PST hybrid systems. The ZnO thin film exhibits a distinct/unusual violet emission (2.95 eV) along with the common near-band-edge and green emissions, when it grows on 6.5R g PST. Such defect-induced emissions disappear with increasing degree of confinement of the bottom PST from 6.5R g to 1.5R g , and sharper UV peak dominates the PL spectra along with a prominent redshift in near-band-edge. Furthermore, with increasing film thickness of the bottom PST template from 1.5R g to 6.5R g , the ALD growth rate of ZnO increases by 25%. The study offers new insights into the research on opto-electronic applications of ZnO thin films in the emerging field of organic electronics. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
URI: | https://doi.org/10.1002/macp.201800435 https://dspace.iiti.ac.in/handle/123456789/7565 |
ISSN: | 1022-1352 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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