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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7591
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dc.contributor.authorKushwaha, Ajay Kumaren_US
dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:12:08Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:12:08Z-
dc.date.issued2018-
dc.identifier.citationUpadhyay, A. K., Kushwaha, A. K., Rastogi, P., Chauhan, Y. S., & Vishvakarma, S. K. (2018). Explicit model of channel charge, backscattering, and mobility for graphene FET in quasi-ballistic regime. IEEE Transactions on Electron Devices, 65(12), 5468-5474. doi:10.1109/TED.2018.2877631en_US
dc.identifier.issn0018-9383-
dc.identifier.otherEID(2-s2.0-85056316477)-
dc.identifier.urihttps://doi.org/10.1109/TED.2018.2877631-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7591-
dc.description.abstractBallistic (collision free) and drift-diffusive (collision dominated) transport mechanisms are both present in graphene, and they together contribute in the current conduction in a graphene FET (GFET). In this paper, we propose an analytical drain current model based on ballistic (nB) and drift-diffusive (nD) charge densities, backscattering coefficient (R), and quasi-ballisticmobility (μeff).nB is calculated using the McKelvey flux theory and nD using the surface potential approach. A closed-form analytical expression is derived for the backscattering coefficient, which is valid under both low and high electric field conditions. The effective quasi-ballistic mobility is obtained by considering both scattering-dominated and scattering free mobilities. The proposed model is well aligned with experimental data, in all regions of operation, for single- and double-gate GFETs. © 2018 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Transactions on Electron Devicesen_US
dc.subjectBackscatteringen_US
dc.subjectBallisticsen_US
dc.subjectCarrier mobilityen_US
dc.subjectCharge densityen_US
dc.subjectDrain currenten_US
dc.subjectElectric fieldsen_US
dc.subjectElectromagnetic wave scatteringen_US
dc.subjectField effect transistorsen_US
dc.subjectGrapheneen_US
dc.subjectMathematical modelsen_US
dc.subjectScatteringen_US
dc.subjectBackscattering coefficientsen_US
dc.subjectDrift diffusionen_US
dc.subjectFermi velocitiesen_US
dc.subjectIntegrated circuit modelingen_US
dc.subjectQuasi-ballisticen_US
dc.subjectTwo-dimensional displaysen_US
dc.subjectGraphene transistorsen_US
dc.titleExplicit Model of Channel Charge, Backscattering, and Mobility for Graphene FET in Quasi-Ballistic Regimeen_US
dc.typeJournal Articleen_US
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