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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7678
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dc.contributor.authorKumar, Sunilen_US
dc.contributor.authorShirage, Parasharam Marutien_US
dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:12:28Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:12:28Z-
dc.date.issued2016-
dc.identifier.citationSrivastava, T., Kumar, S., Shirage, P., & Sen, S. (2016). Reduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnO. Scripta Materialia, 124, 11-14. doi:10.1016/j.scriptamat.2016.06.038en_US
dc.identifier.issn1359-6462-
dc.identifier.otherEID(2-s2.0-84978929462)-
dc.identifier.urihttps://doi.org/10.1016/j.scriptamat.2016.06.038-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7678-
dc.description.abstractZnO is known to have oxygen vacancies which count for green emission. The oxygen deficient ZnO system has a bandgap of 3.12 eV with an Urbach tail of 0.083 eV which hints at structural irregularities in the material. This inherent property of oxygen deficiency is reduced by substituting with Si4 +, most probably due to the extra charge on the substituent ions, improving the structural regularity and is revealed by photoluminescence. Reducing Urbach energy and increasing bandgap supports the claim and is supported by a quantitative evaluation of defects in ZnO. © 2016 Elsevier B.V.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.sourceScripta Materialiaen_US
dc.subjectDefectsen_US
dc.subjectEnergy gapen_US
dc.subjectOxygenen_US
dc.subjectPhotoluminescenceen_US
dc.subjectZinc oxideen_US
dc.subjectDefect stateen_US
dc.subjectGreen emissionsen_US
dc.subjectOxygen deficiencyen_US
dc.subjectOxygen deficienten_US
dc.subjectQuantitative evaluationen_US
dc.subjectStructural regularityen_US
dc.subjectUrbach energyen_US
dc.subjectUrbach tailen_US
dc.subjectOxygen vacanciesen_US
dc.titleReduction of O2– related defect states related to increased bandgap in Si4 + substituted ZnOen_US
dc.typeJournal Articleen_US
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