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| Title: | Structural optoelectronic and morphological investigation in Cu1-xSixO (x≤0<0.0468) |
| Authors: | Paul, Ananta Mishra, Prashant Kumar Amin, Ruhul Kissinquinker, Bungkiu Sen, Somaditya |
| Issue Date: | 2020 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | Paul, A., Ganesh, S., Mishra, P. K., Amin, R., Kissinquinker, B., & Sen, S. (2020). Structural optoelectronic and morphological investigation in Cu1-xSixO (x≤0<0.0468). Paper presented at the AIP Conference Proceedings, , 2265 doi:10.1063/5.0017495 |
| Abstract: | Si plays an important role in improving the conductive behavior of most oxides. Si+4 in place of Cu2+ in CuO have a tendency of attracting more oxygen in the lattice. By doping ~4% Si in CuO the indirect bandgap is observed to be modified from 1.49 eV to 1.45 eV. Raman and XRD studies detail the structural properties and reveal no extra phase in the solid solutions. The conductivity increased by three orders in the Si doped samples. FESEM studies reveal a change of morphology with Si doping from spherical to nanorod-like formation. © 2020 American Institute of Physics Inc.. All rights reserved. |
| URI: | https://doi.org/10.1063/5.0017495 https://dspace.iiti.ac.in/handle/123456789/7712 |
| ISBN: | 9.78074E+12 |
| ISSN: | 0094-243X |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Physics |
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