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DC Field | Value | Language |
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dc.contributor.author | Mishra, Prashant Kumar | en_US |
dc.contributor.author | Ayaz, Saniya | en_US |
dc.contributor.author | Nasir, Mohd Farooq | en_US |
dc.contributor.author | Gupta, Prashant | en_US |
dc.contributor.author | Sen, Somaditya | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-21T11:13:48Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-21T11:13:48Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Mishra, P. K., Ayaz, S., Bajpai, G., Nasir, M., Gupta, P., & Sen, S. (2020). Role of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 O. Paper presented at the AIP Conference Proceedings, , 2265 doi:10.1063/5.0016767 | en_US |
dc.identifier.isbn | 9.78074E+12 | - |
dc.identifier.issn | 0094-243X | - |
dc.identifier.other | EID(2-s2.0-85096512988) | - |
dc.identifier.uri | https://doi.org/10.1063/5.0016767 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7714 | - |
dc.description.abstract | The simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits fast and slow response and recovery. Ga3+ incorporation enhances the photocurrent drastically as revealed from UV sensing behavior. The higher sensitivity is achieved for of (Ga/Ti) co-doped samples due to the increase in oxygen interstitials defects. © 2020 American Institute of Physics Inc.. All rights reserved. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics Inc. | en_US |
dc.source | AIP Conference Proceedings | en_US |
dc.title | Role of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 O | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Physics |
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