Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7714
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dc.contributor.authorMishra, Prashant Kumaren_US
dc.contributor.authorAyaz, Saniyaen_US
dc.contributor.authorNasir, Mohd Farooqen_US
dc.contributor.authorGupta, Prashanten_US
dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:13:48Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:13:48Z-
dc.date.issued2020-
dc.identifier.citationMishra, P. K., Ayaz, S., Bajpai, G., Nasir, M., Gupta, P., & Sen, S. (2020). Role of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 O. Paper presented at the AIP Conference Proceedings, , 2265 doi:10.1063/5.0016767en_US
dc.identifier.isbn9.78074E+12-
dc.identifier.issn0094-243X-
dc.identifier.otherEID(2-s2.0-85096512988)-
dc.identifier.urihttps://doi.org/10.1063/5.0016767-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7714-
dc.description.abstractThe simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits fast and slow response and recovery. Ga3+ incorporation enhances the photocurrent drastically as revealed from UV sensing behavior. The higher sensitivity is achieved for of (Ga/Ti) co-doped samples due to the increase in oxygen interstitials defects. © 2020 American Institute of Physics Inc.. All rights reserved.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceAIP Conference Proceedingsen_US
dc.titleRole of Ga3+/Ti4+ induced defects on UV sensing applications of Zn0.96875 (Gaxti1-X)0.03125 Oen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Physics

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