Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7725
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dc.contributor.authorMulchandani, Komalen_US
dc.contributor.authorSoni, Ankiten_US
dc.contributor.authorMavani, Krushna R.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:13:50Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:13:50Z-
dc.date.issued2019-
dc.identifier.citationMulchandani, K., Soni, A., & Mavani, K. R. (2019). Effects of deposition temperature on growth and properties of pulsed laser deposited VO 2 thin films and nanostructures. Paper presented at the AIP Conference Proceedings, , 2100 doi:10.1063/1.5098605en_US
dc.identifier.isbn9.78074E+12-
dc.identifier.issn0094-243X-
dc.identifier.otherEID(2-s2.0-85065341076)-
dc.identifier.urihttps://doi.org/10.1063/1.5098605-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7725-
dc.description.abstractPure crystalline vanadium dioxide (VO 2 ) exhibits reversible metal to insulator transition at about 341K, making it suitable for the memory devices. We have deposited thin films and nanostructures of VO 2 on quartz substrate using pulsed laser deposition technique. The effects of deposition temperature on the structural and electrical properties have been investigated. X-ray diffraction spectra show that prepared thin films and nanostructures are oriented along (011) direction and crystallinity of the samples depends on the deposition temperature. Scanning electron microscopy reveals the temperature dependent morphological changes in the nanostructures. Temperature dependent resistivity measurement shows metal to insulator transition. © 2019 Author(s).en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceAIP Conference Proceedingsen_US
dc.titleEffects of deposition temperature on growth and properties of pulsed laser deposited VO 2 thin films and nanostructuresen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Physics

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