Effect of annealing on structure, optoelectronic and photoresponsivity properties of sol-gel prepared ZnO nanoparticles

Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7735

Title:	Effect of annealing on structure, optoelectronic and photoresponsivity properties of sol-gel prepared ZnO nanoparticles
Authors:	Mishra, Prashant Kumar Sen, Somaditya Amin, Ruhul
Issue Date:	2019
Publisher:	Elsevier Ltd
Citation:	Mishra, P. K., Sen, S., Amin, R., & Biring, S. (2019). Effect of annealing on structure, optoelectronic and photoresponsivity properties of sol-gel prepared ZnO nanoparticles. Paper presented at the Materials Today: Proceedings, , 17 261-265. doi:10.1016/j.matpr.2019.06.428
Abstract:	ZnO is successfully synthesized by sol-gel synthesis route. These are analyzed by XRD, FESEM, and UV Sensing measurements. XRD indicates a polycrystalline nature with appreciable crystallinity. Changes in band structure and defect states are also discussed. Defect states are found to increase with annealing temperature and hence increase in oxygen related defects also noticed. Photocurrent decreases with annealing temperature. It may have wide applications in UV-sensors, UV filters, ad UV absorptive membranes etc. © 2019 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Conference on Advanced Materials, Energy & Environmental Sustainability, ICAMEES2018
URI:	https://doi.org/10.1016/j.matpr.2019.06.428 https://dspace.iiti.ac.in/handle/123456789/7735
ISSN:	2214-7853
Type of Material:	Conference Paper
Appears in Collections:	Department of Physics

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