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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chaudhuri, Sayan | en_US |
| dc.contributor.author | Bhobe, Preeti Anand | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:13:54Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:13:54Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Chaudhuri, S., Bhobe, P. A., & Nigam, A. K. (2017). Electronic properties of Fe2TiSn1-xSix. Paper presented at the AIP Conference Proceedings, , 1832 doi:10.1063/1.4980651 | en_US |
| dc.identifier.isbn | 9.78074E+12 | - |
| dc.identifier.issn | 0094-243X | - |
| dc.identifier.other | EID(2-s2.0-85020309854) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.4980651 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7755 | - |
| dc.description.abstract | Transport properties of Heusler compositions, Fe2TiSn1-xSix (x = 0, 0.05, 0.1) have been investigated with temperature dependent electrical resistivity measurements in the presence of magnetic field. The parent composition, Fe2TiSn, is prone to Fe/Ti antisite disorder that gets reflected in its low temperature resistivity behavior. With Si doping, this disorder is seen to decrease. However, solubility limit of Si is reached with x = 0.1. X-ray diffraction profile shows clear signatures of secondary phase formation in x = 0.1, disturbing the L21 symmetry in x = 0 and 0.05. It is noticed that samples show a superconducting drop at ∼ 4K. This is not a bulk property though, and comes to fore due to presence of excess Sn on the sample surface. © 2017 Author(s). | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.source | AIP Conference Proceedings | en_US |
| dc.title | Electronic properties of Fe2TiSn1-xSix | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Physics | |
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