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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rai, Hari Mohan | en_US |
| dc.contributor.author | Sagdeo, Pankaj R. | en_US |
| dc.contributor.author | Kumar, Rajesh | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:13:56Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:13:56Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | Saxena, S. K., Rai, H. M., Late, R., Sagdeo, P. R., & Kumar, R. (2015). Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE). Paper presented at the AIP Conference Proceedings, , 1661 doi:10.1063/1.4915418 | en_US |
| dc.identifier.isbn | 9.78074E+12 | - |
| dc.identifier.issn | 0094-243X | - |
| dc.identifier.other | EID(2-s2.0-85006226081) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.4915418 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7773 | - |
| dc.description.abstract | In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence. © 2015 AIP Publishing LLC. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.source | AIP Conference Proceedings | en_US |
| dc.title | Origin of photoluminescence from Silicon nanowires prepared by Metal Induced Etching (MIE) | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Physics | |
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