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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mavani, Krushna R. | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:13:57Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:13:57Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | Chandra, M., Aziz, F., Rana, R., Late, R., Rana, D. S., & Mavani, K. R. (2014). Charge transport in NdNiO3 thin films: Effects of mn-doping versus tensile strain. Paper presented at the AIP Conference Proceedings, , 1591 1375-1376. doi:10.1063/1.4872964 | en_US |
| dc.identifier.isbn | 9.78074E+12 | - |
| dc.identifier.issn | 0094-243X | - |
| dc.identifier.other | EID(2-s2.0-84903211476) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.4872964 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7780 | - |
| dc.description.abstract | We have performed a comparative study of total three films, two films of NdNiO3 deposited on SrTiO3 (STO) and NdGaO3 (NGO) single-crystals and one 10% Mn-doped thin film of NdNi0.9Mn0.1O3 deposited on NGO. We find that both, the enhanced tensile strain and the Mn-doping drive the system to an insulating state from a metallic state at high temperatures. NdNiO3/NGO film shows a metal-insulator transition, which disappears in the other two films due to opening of charge-transfer gap. These results reveal that the effect of tensile strain on the resistivity of NdNiO3 is profound at low temperatures, whereas Mn-doping clearly dominates at high temperatures. © 2014 AIP Publishing LLC. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics Inc. | en_US |
| dc.source | AIP Conference Proceedings | en_US |
| dc.subject | Charge transfer | en_US |
| dc.subject | Manganese | en_US |
| dc.subject | Semiconductor insulator boundaries | en_US |
| dc.subject | Solid state physics | en_US |
| dc.subject | Strain | en_US |
| dc.subject | Tensile strain | en_US |
| dc.subject | Thin films | en_US |
| dc.subject | Charge-transfer gap | en_US |
| dc.subject | Comparative studies | en_US |
| dc.subject | High temperature | en_US |
| dc.subject | Insulating state | en_US |
| dc.subject | Low temperatures | en_US |
| dc.subject | Metallic state | en_US |
| dc.subject | Mn-doping | en_US |
| dc.subject | Semiconductor doping | en_US |
| dc.title | Charge transport in NdNiO3 thin films: Effects of mn-doping versus tensile strain | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Physics | |
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