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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sahu, Gayatri | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:13:58Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:13:58Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Sahu, G. (2013). Raman scattering study on sequentially au implanted sample. Paper presented at the AIP Conference Proceedings, , 1536 293-294. doi:10.1063/1.4810216 | en_US |
| dc.identifier.isbn | 9.78074E+12 | - |
| dc.identifier.issn | 0094-243X | - |
| dc.identifier.other | EID(2-s2.0-84880092141) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.4810216 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7783 | - |
| dc.description.abstract | A sequential two-stage 32 keV and 1.5 MeV Au implantation technique has been used to synthesize strained Si nanocrystals. Samples were annealed in air at temperatures between 500° to 950° C for a fixed annealing time of 1 hr. Annealing of the as-implanted sample at 500° C has been found to result in strain free Si NC formation. Higher temperature annealing is found to result in growth in size from recrystallization of the a-Si matrix. The data could be well explained using a phonon confinement model with an extremely narrow size distribution. © 2013 AIP Publishing LLC. | en_US |
| dc.language.iso | en | en_US |
| dc.source | AIP Conference Proceedings | en_US |
| dc.title | Raman scattering study on sequentially Au implanted sample | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Physics | |
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