Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7784
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dc.contributor.authorMavani, Krushna R.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:13:58Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:13:58Z-
dc.date.issued2013-
dc.identifier.citationChandra, M., Khare, A., Aziz, F., Rana, R., Rana, D. S., & Mavani, K. R. (2013). Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films. Paper presented at the AIP Conference Proceedings, , 1512 986-987. doi:10.1063/1.4791373en_US
dc.identifier.isbn9.78074E+12-
dc.identifier.issn0094-243X-
dc.identifier.otherEID(2-s2.0-84874881724)-
dc.identifier.urihttps://doi.org/10.1063/1.4791373-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7784-
dc.description.abstractWe have studied the effects of Mn-doping in a series of NdNi 1-xMnxO3 (x = 0, 0.10) thin films deposited on NdGaO3 (001) and YAlO3 (100) substrates, respectively with tensile and compressive in-plane strains. Interestingly, only 10% Mn-doping totally suppresses the metallicity in both the thin films indicating an opening of charge-transfer gap. In addition, we have also observed contrasting effects of compressive and tensile strains on electrical transport of Mn-doped thin films. There is an enhancement in magnetization as a result of Mn-doping. © 2013 American Institute of Physics.en_US
dc.language.isoenen_US
dc.sourceAIP Conference Proceedingsen_US
dc.titleContrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin filmsen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Physics

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