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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mavani, Krushna R. | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T11:13:58Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T11:13:58Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Chandra, M., Khare, A., Aziz, F., Rana, R., Rana, D. S., & Mavani, K. R. (2013). Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films. Paper presented at the AIP Conference Proceedings, , 1512 986-987. doi:10.1063/1.4791373 | en_US |
| dc.identifier.isbn | 9.78074E+12 | - |
| dc.identifier.issn | 0094-243X | - |
| dc.identifier.other | EID(2-s2.0-84874881724) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.4791373 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/7784 | - |
| dc.description.abstract | We have studied the effects of Mn-doping in a series of NdNi 1-xMnxO3 (x = 0, 0.10) thin films deposited on NdGaO3 (001) and YAlO3 (100) substrates, respectively with tensile and compressive in-plane strains. Interestingly, only 10% Mn-doping totally suppresses the metallicity in both the thin films indicating an opening of charge-transfer gap. In addition, we have also observed contrasting effects of compressive and tensile strains on electrical transport of Mn-doped thin films. There is an enhancement in magnetization as a result of Mn-doping. © 2013 American Institute of Physics. | en_US |
| dc.language.iso | en | en_US |
| dc.source | AIP Conference Proceedings | en_US |
| dc.title | Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi0.90Mn0.10O 3 thin films | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Physics | |
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