Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7877
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dc.contributor.authorGowthamaraju, S.en_US
dc.contributor.authorBhobe, Preeti Ananden_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:14:15Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:14:15Z-
dc.date.issued2021-
dc.identifier.citationGowthamaraju, S., Deshpande, U. P., Anwar, S., Nigam, A. K., & Bhobe, P. A. (2021). Effect of vacancy on thermoelectric properties of polycrystalline SnSe. Journal of Materials Science: Materials in Electronics, 32(9), 11568-11576. doi:10.1007/s10854-021-05750-8en_US
dc.identifier.issn0957-4522-
dc.identifier.otherEID(2-s2.0-85104421890)-
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05750-8-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7877-
dc.description.abstractRecently reported unprecedented ZT value of ∼ 2.6 at 915 K for single crystalline SnSe makes this compound as promising candidate for thermoelectric application. The enhancement of thermoelectric conversion efficiency of the polycrystalline form of SnSe is equally essential for commercialization and mass scale production. Herein, we report the effect of cation vacancies on the thermoelectric properties of pure and substituted (5% of Sb and In) compositions. Phase pure compositions with nano-sheet-like stacked morphology have been studied for its crystal structure, electrical conduction, Seebeck coefficient and thermal conduction. Presence of vacancies and localized states confirmed from Urbach energy and shows significant influence on resistivity and Seebeck coefficient. Anisotropy in the crystal structure and presence of defects (point and vacancies) are found to be the major contributors for reduction in the thermal conductivity by 41% and 64% for Sb and In substituted compositions, respectively. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.sourceJournal of Materials Science: Materials in Electronicsen_US
dc.subjectAntimonyen_US
dc.subjectCrystal structureen_US
dc.subjectLayered semiconductorsen_US
dc.subjectNanosheetsen_US
dc.subjectSeebeck coefficienten_US
dc.subjectSelenium compoundsen_US
dc.subjectThermal conductivityen_US
dc.subjectThermoelectric equipmenten_US
dc.subjectThermoelectricityen_US
dc.subjectElectrical conductionen_US
dc.subjectMass scale productionsen_US
dc.subjectSingle-crystallineen_US
dc.subjectStacked morphologyen_US
dc.subjectThermal conductionen_US
dc.subjectThermoelectric applicationen_US
dc.subjectThermoelectric conversion efficiencyen_US
dc.subjectThermoelectric propertiesen_US
dc.subjectTin compoundsen_US
dc.titleEffect of vacancy on thermoelectric properties of polycrystalline SnSeen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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