Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7927
Full metadata record
DC FieldValueLanguage
dc.contributor.authorKumar, Rajeshen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:14:25Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:14:25Z-
dc.date.issued2021-
dc.identifier.citationMitrofanov, I., Nazarov, D., Koshtyal, Y., Kim, A., Kumar, R., Rumyantsev, A., . . . Maximov, M. (2022). Electrochemical activity and SEI formation inhibition of al in Ni–Al-O ALD thin films. Ionics, 28(1), 259-271. doi:10.1007/s11581-021-04322-4en_US
dc.identifier.issn0947-7047-
dc.identifier.otherEID(2-s2.0-85117906269)-
dc.identifier.urihttps://doi.org/10.1007/s11581-021-04322-4-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7927-
dc.description.abstractThin-film solid-state lithium-ion batteries (SSLIBs) are promising power supplies for small-scale electronics, particularly for Internet of Things (IoT) devices, sensors, microchips, and others. Transition metal oxides have potential for application in SSLIBs due to their high theoretical capacity. In this work, films of mixed nickel and aluminum oxides (NAO) were obtained at a temperature of 300 ℃ by plasma-assisted atomic layer deposition (ALD). The growth rates of the films turned out to be higher than the expected ones calculated from the growth rates of monoxide films. The increase in the growth rates is presumably associated with the chemosorption of a larger number of reagent molecules on the film surface during the alternation of reagent pairs during the ALD. High growth per cycle values of alumina lead to higher aluminum content and lower density of NAO films. The phase composition of NAO 50/1 and 75/1 films corresponds to the cubic NiO (Fm-3 m) space group. NAO films have a uniform surface dotted with round and fragmented particles. The electrochemical properties of the obtained films were studied by the cyclic voltammetry and cyclic charge–discharge tests at discharge currents from 0.5 to 60C. With an 80-fold increase in the discharge current, the electrode capacity decreased by 30%. It was shown the presence of aluminum in certain concentrations slows down the growth of pseudocapacitance by 20–28% and does not significantly affect the Coulomb efficiency of the films obtained. © 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.sourceIonicsen_US
dc.subjectAluminaen_US
dc.subjectAluminum coatingsen_US
dc.subjectAluminum oxideen_US
dc.subjectCyclic voltammetryen_US
dc.subjectElectric dischargesen_US
dc.subjectFilm growthen_US
dc.subjectGrowth rateen_US
dc.subjectInternet of thingsen_US
dc.subjectLithium compoundsen_US
dc.subjectNickel oxideen_US
dc.subjectThin film lithium ion batteriesen_US
dc.subjectThin filmsen_US
dc.subjectTransition metal oxidesen_US
dc.subjectTransition metalsen_US
dc.subjectAluminium oxide filmsen_US
dc.subjectAtomic-layer depositionen_US
dc.subjectDischarges currentsen_US
dc.subjectElectrochemical activitiesen_US
dc.subjectNickel oxide filmsen_US
dc.subjectPower supplyen_US
dc.subjectSEI formationsen_US
dc.subjectSmall scaleen_US
dc.subjectSolid state lithium ion batteryen_US
dc.subjectThin-filmsen_US
dc.subjectAtomic layer depositionen_US
dc.titleElectrochemical activity and SEI formation inhibition of Al in Ni–Al-O ALD thin filmsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: