Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8011
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dc.contributor.authorAyaz, Saniyaen_US
dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:14:42Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:14:42Z-
dc.date.issued2020-
dc.identifier.citationAyaz, S., Sharma, N., Dash, A., & Sen, S. (2020). Effect of Al3+/Si4+codoping on the structural, optoelectronic and UV sensing properties of ZnO. Journal of Materials Research, 35(10), 1337-1345. doi:10.1557/jmr.2020.83en_US
dc.identifier.issn0884-2914-
dc.identifier.otherEID(2-s2.0-85085110623)-
dc.identifier.urihttps://doi.org/10.1557/jmr.2020.83-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8011-
dc.description.abstractThe structural, vibrational, and optoelectronic properties of sol-gel synthesized Zn1-x(Al0.5Si0.5)xO nanoparticles were investigated. The X-ray diffraction studies of the samples confirmed the hexagonal wurtzite phase with the space group P63mc. No significant changes were observed in the lattice parameters. The increase in the intensity of Raman mode observed at 438 cm-1 indicates a decrease in the crystallite size. The reduction in the deep-level emission band with the introduction of Al/Si indicates a decrease in intrinsic defects for the codoped sample. A unique electron paramagnetic resonance signal at g= 1.96 follows the same trend as the green luminescence, and its evolution was shown to probe the oxygen vacancy concentrations. I-V characteristics curve confirm the increase in the conductivity for the codoped samples. To evaluate the role of surface defects, ultraviolet photoresponse behavior as a function of time was also studied, and an increase in the photocurrent was observed. The slow decay and rise in the photocurrent are because of multiple trapping by interstitial defects. A relatively faster response time was observed with the substitution of Al/Si. It has been observed that prepared nanomaterials are suitable for optoelectronic devices. © Materials Research Society 2020.en_US
dc.language.isoenen_US
dc.publisherCambridge University Pressen_US
dc.sourceJournal of Materials Researchen_US
dc.subjectCrystallite sizeen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectParamagnetic resonanceen_US
dc.subjectSiliconen_US
dc.subjectSol-gelsen_US
dc.subjectSurface defectsen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectZinc oxideen_US
dc.subjectZinc sulfideen_US
dc.subjectDeep level emissionen_US
dc.subjectGreen luminescenceen_US
dc.subjectHexagonal wurtziteen_US
dc.subjectInterstitial defectsen_US
dc.subjectIV characteristicsen_US
dc.subjectOptoelectronic propertiesen_US
dc.subjectOxygen vacancy concentrationen_US
dc.subjectX-ray diffraction studiesen_US
dc.subjectZinc alloysen_US
dc.titleEffect of Al3+/Si4+codoping on the structural, optoelectronic and UV sensing properties of ZnOen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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