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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chakraborty, Sudip | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-21T11:15:02Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-21T11:15:02Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Yang, J., Wang, Y., Lagos, M. J., Manichev, V., Fullon, R., Song, X., . . . Chhowalla, M. (2019). Single atomic vacancy catalysis. ACS Nano, 13(9), 9958-9964. doi:10.1021/acsnano.9b05226 | en_US |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.other | EID(2-s2.0-85071653090) | - |
dc.identifier.uri | https://doi.org/10.1021/acsnano.9b05226 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/8091 | - |
dc.description.abstract | Single atom catalysts provide exceptional activity. However, measuring the intrinsic catalytic activity of a single atom in real electrochemical environments is challenging. Here, we report the activity of a single vacancy for electrocatalytically evolving hydrogen in two-dimensional (2D) MoS2. Surprisingly, we find that the catalytic activity per vacancy is not constant but increases with its concentration, reaching a sudden peak in activity at 5.7 × 1014 cm-2 where the intrinsic turn over frequency and Tafel slope of a single atomic vacancy was found to be ∼5 s-1 and 44 mV/dec, respectively. At this vacancy concentration, we also find a local strain of ∼3% and a semiconductor to metal transition in 2D MoS2. Our results suggest that, along with increasing the number of active sites, engineering the local strain and electrical conductivity of catalysts is essential in increasing their activity. © 2019 American Chemical Society. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Chemical Society | en_US |
dc.source | ACS Nano | en_US |
dc.subject | Atoms | en_US |
dc.subject | Electrocatalysis | en_US |
dc.subject | Hydrogen evolution reaction | en_US |
dc.subject | Layered semiconductors | en_US |
dc.subject | Molybdenum compounds | en_US |
dc.subject | Molybdenum metallography | en_US |
dc.subject | Sulfur compounds | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.subject | Electrical conductivity | en_US |
dc.subject | Electrochemical environments | en_US |
dc.subject | Helium ion microscopes | en_US |
dc.subject | Molybdenum disulfide | en_US |
dc.subject | Number of active sites | en_US |
dc.subject | Scanning transmission electron microscopes | en_US |
dc.subject | Semiconductor-to-metal transitions | en_US |
dc.subject | Single vacancies | en_US |
dc.subject | Catalyst activity | en_US |
dc.title | Single Atomic Vacancy Catalysis | en_US |
dc.type | Journal Article | en_US |
Appears in Collections: | Department of Physics |
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