Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8113
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dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:15:08Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:15:08Z-
dc.date.issued2019-
dc.identifier.citationBajpai, G., Ostawal, M., Moirangthem, I., Bajpai, S., Basaula, D. R., Khan, M., . . . Sen, S. (2019). Multicomponent zn (1-x) fe 0.8x na 0.2x O semiconductors: Effect of dopant concentration and ionic radius on structural, opto-electronics, magnetic and sensing properties. Materials Science in Semiconductor Processing, 98, 121-130. doi:10.1016/j.mssp.2019.04.003en_US
dc.identifier.issn1369-8001-
dc.identifier.otherEID(2-s2.0-85063891807)-
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2019.04.003-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8113-
dc.description.abstractFe incorporation in ZnO lattice draws more oxygen which reduces oxygen vacancies. The smaller size and larger charge of the Fe 3+ ion helps to reduce strain initially but with increased substitution generates more strain due to excess oxygen and structural deformation. The mismatch of ionic radii may be addressed by co-substituting with a larger element but with lesser charge. Oxygen defects play a vital role in magnetization and UV-sensing properties of pure ZnO. Oxygen vacancy mediated ferromagnetic exchange interaction should reduce in Fe-doped ZnO due to reduction oxygen vacancies. Similarly UV-sensing should also decrease. Larger sized Na + co-incorporation, with smaller Fe 3+ , helps retention of oxygen vacancies in Zn (1-x) Fe (0.8x) Na (0.2x) O (0 ≤ x ≤ 4/128) enhancing magnetization and enabling faster UV-sensing properties. The x = 4 ∕ 128 sample reveals promising magnetization and shows faster UV-sensing. © 2019en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.sourceMaterials Science in Semiconductor Processingen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectFerromagnetismen_US
dc.subjectGas adsorptionen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectMagnetizationen_US
dc.subjectPhotoluminescenceen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectZinc oxideen_US
dc.subjectEffect of dopantsen_US
dc.subjectFerromagnetic exchangeen_US
dc.subjectFerromagnetic exchange interactionen_US
dc.subjectOxygen adsorptionen_US
dc.subjectReduction oxygenen_US
dc.subjectStructural deformationen_US
dc.subjectStructural distortionsen_US
dc.subjectUV-sensingen_US
dc.subjectOxygen vacanciesen_US
dc.titleMulticomponent Zn (1-x) Fe 0.8x Na 0.2x O semiconductors: Effect of dopant concentration and ionic radius on structural, opto-electronics, magnetic and sensing propertiesen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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