Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8129
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dc.contributor.authorSen, Somadityaen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:15:12Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:15:12Z-
dc.date.issued2019-
dc.identifier.citationBajpai, G., Riyajuddin, S., Ghosh, K., Bajpai, S., Basaula, D. R., Bhatt, S., . . . Sen, S. (2019). Structural, opto-electronics and magnetic study of Fe/Si doped ZnO. Journal of Materials Science: Materials in Electronics, 30(10), 9344-9355. doi:10.1007/s10854-019-01264-6en_US
dc.identifier.issn0957-4522-
dc.identifier.otherEID(2-s2.0-85064518496)-
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01264-6-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8129-
dc.description.abstractStructural, opto-electronics and magnetic hysteresis properties have been studied of sol–gel synthesized Zn (0.96875) Si (0.03125)-x Fe x O (0 ≤ x ≤ 0.03125) nano-particles. The crystallites belong to a wurtzite P6 3 mc space group. The ratio of Si:Fe is varied in these materials. Si 4+ and Fe 3+ both attract oxygen to the lattice. The excess oxygen content reduces oxygen vacancies and further creates oxygen interstitials. However, there is a limit of oxygen intake as space is used up when a larger Fe 3+ ion substitutes a smaller Si 4+ ion. Hence, with increasing Fe 3+ content the amount of oxygen added to the lattice starts reducing firstly, due to the lesser charge and secondly due to the larger size of Fe 3+ . This trend results in optimized maxima of oxygen content and affects the lattice parameters, lattice strain, defect states thereby tuning bandgap and photoluminescent properties. Excluding the pure ZnO sample, all samples exhibit weak ferromagnetic interactions that enhance with increasing Fe content. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.sourceJournal of Materials Science: Materials in Electronicsen_US
dc.subjectHysteresisen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectNanomagneticsen_US
dc.subjectNanoparticlesen_US
dc.subjectSolsen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectZinc oxideen_US
dc.subjectZinc sulfideen_US
dc.subjectExcess oxygenen_US
dc.subjectHysteresis propertiesen_US
dc.subjectLattice strainen_US
dc.subjectMagnetic studiesen_US
dc.subjectOxygen contenten_US
dc.subjectOxygen interstitialsen_US
dc.subjectPhoto-luminescent propertiesen_US
dc.subjectWeak ferromagnetic interactionsen_US
dc.subjectOxygen vacanciesen_US
dc.titleStructural, opto-electronics and magnetic study of Fe/Si doped ZnOen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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