Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8130
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dc.contributor.authorSati, Aanchalen_US
dc.contributor.authorKumar, Anilen_US
dc.contributor.authorWarshi, M. Kamalen_US
dc.contributor.authorKumar, Rajeshen_US
dc.contributor.authorSagdeo, Pankaj R.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:15:13Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:15:13Z-
dc.date.issued2019-
dc.identifier.citationSati, A., Mishra, V., Kumar, A., Warshi, M. K., Sagdeo, A., Kumar, R., & Sagdeo, P. R. (2019). Effect of structural disorder on the electronic and phononic properties of hf doped BaTiO 3. Journal of Materials Science: Materials in Electronics, 30(10), 9498-9506. doi:10.1007/s10854-019-01281-5en_US
dc.identifier.issn0957-4522-
dc.identifier.otherEID(2-s2.0-85064276820)-
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01281-5-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8130-
dc.description.abstractThe classical ferroelectric material BaTiO 3 has been doped with large cation i.e., Hf at Ti site in order to understand the effect of structural disorder in electronic and phononic state. The Raman spectroscopy measurement on these samples indicates increase in the structural disorder with Hf doping. The detail analysis of the Raman spectroscopy data clearly suggests the appearance of new Raman mode at ~ 780 cm −1 and the presence of an asymmetry in almost all Raman modes. The appearance of new Raman mode has been attributed due to the structural disorder induced phonon modes; and this is further confirmed using laser irradiation studies. Additionally, it has been observed that the intensity of this new phonon mode increases systematically with Hf doping; indicating increase in the phononic disorder. It has been observed that the line shape Raman phonon modes show significant asymmetry and this asymmetry along with the full peak width at half maxima (FWHM) of Raman phonon mode shows systematic variation with Hf doping. The observed asymmetric Raman line profile has been analysed through Fano model of electron–phonon coupling which suggests an increase in the electron–phonon coupling with Hf doping. In order to get further insight on increase in the electron–phonon coupling near band edge optical absorption spectroscopy measurements has been carried out and value of electronic disorder in the form of Urbach energy has been estimated and the same is observed to scale with Hf doping. Thus, the systematic increase in the intensity of disorder phonon mode and that of electronic disorder has been observed. This suggests that structural disorder not only affects phonons but electronic state of the system as well. Thus, it appears that the increase in the width of electronic and phononic disorder may overlap in energy scale and may be responsible for the observed increase in the electron–phonon coupling parameter as estimated through Fano equation. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.sourceJournal of Materials Science: Materials in Electronicsen_US
dc.subjectAbsorption spectroscopyen_US
dc.subjectBarium titanateen_US
dc.subjectElectronic statesen_US
dc.subjectElectronsen_US
dc.subjectFerroelectric materialsen_US
dc.subjectHafniumen_US
dc.subjectLight absorptionen_US
dc.subjectRaman spectroscopyen_US
dc.subjectElectronic disorderen_US
dc.subjectNear band edgeen_US
dc.subjectPhonon couplingen_US
dc.subjectRaman phonon modesen_US
dc.subjectRaman spectroscopy measurementsen_US
dc.subjectStructural disordersen_US
dc.subjectSystematic variationen_US
dc.subjectUrbach energyen_US
dc.subjectPhononsen_US
dc.titleEffect of structural disorder on the electronic and phononic properties of Hf doped BaTiO 3en_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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