Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8187
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dc.contributor.authorSati, Aanchalen_US
dc.contributor.authorKumar, Anilen_US
dc.contributor.authorWarshi, M. Kamalen_US
dc.contributor.authorKumar, Rajeshen_US
dc.contributor.authorSagdeo, Pankaj R.en_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:15:28Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:15:28Z-
dc.date.issued2019-
dc.identifier.citationSati, A., Kumar, A., Mishra, V., Warshi, K., Sagdeo, A., Anwar, S., . . . Sagdeo, P. R. (2019). Direct correlation between the band gap and dielectric loss in hf doped BaTiO 3. Journal of Materials Science: Materials in Electronics, doi:10.1007/s10854-019-01128-zen_US
dc.identifier.issn0957-4522-
dc.identifier.otherEID(2-s2.0-85063085156)-
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01128-z-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8187-
dc.description.abstractEffect of Hf doping at Ti site in BaTiO 3 on the optical band gap (E g ), Urbach energy (E u ), dielectric constant (ε) and dielectric loss i.e. loss tangent (tanδ) have been investigated. It has been observed that with Hf doping, the value of E g and E u systematically increases whereas; the value of dielectric constant and dielectric loss systematically decreases. The decrease in the value of dielectric constant has been explained in terms of reduction in the tetragonality i.e. by c/a ratio. In the present investigation, it has been proposed that increase in the value of E g and E u , leads to decrease in the tunneling probability of electron from valence band to the conduction band which may result in decrease in the value of the dielectric loss. Present investigations clearly suggest that the value of dielectric loss is effectively controlled by E g . Thus, through present studies, a new methodology has been proposed for understanding the origin of dielectric loss. Moreover, a possible correlation between the E g and tanδ in terms of tunneling probability has been provided. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoenen_US
dc.publisherSpringer New York LLCen_US
dc.sourceJournal of Materials Science: Materials in Electronicsen_US
dc.subjectBarium titanateen_US
dc.subjectDielectric devicesen_US
dc.subjectEnergy gapen_US
dc.subjectHafniumen_US
dc.subjectHf dopingen_US
dc.subjectHf-dopeden_US
dc.subjectLoss tangenten_US
dc.subjectTetragonalityen_US
dc.subjectTunneling probabilitiesen_US
dc.subjectUrbach energyen_US
dc.subjectDielectric lossesen_US
dc.titleDirect correlation between the band gap and dielectric loss in Hf doped BaTiO 3en_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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