Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8482
Title: Half-metallicity in armchair boron nitride nanoribbons: A first-principles study
Authors: Rai, Hari Mohan
Kumar, Rajesh
Sagdeo, Pankaj R.
Keywords: Astrophysics;Atoms;Boron nitride;Calculations;Electronic structure;Hydrogenation;Magnetic semiconductors;Magnetism;Nanoribbons;Nitrides;Passivation;Spectrum analysis;Spin polarization;Boron nitride nanoribbons;Density of state;Electronic and magnetic properties;First-principles calculation;First-principles study;Local spin density approximation;Spin-polarized charges;Transmission spectrums;Density functional theory
Issue Date: 2015
Publisher: Elsevier Ltd
Citation: Rai, H. M., Saxena, S. K., Mishra, V., Late, R., Kumar, R., Sagdeo, P. R., . . . Srivastava, P. (2015). Half-metallicity in armchair boron nitride nanoribbons: A first-principles study. Solid State Communications, 212, 19-24. doi:10.1016/j.ssc.2015.04.003
Abstract: Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail by calculating electronic and magnetic properties of these hydrogenated ABNNRs by means of first-principles calculations within the local spin-density approximation (LSDA). ABNNRs with only edge B atoms passivated by H atoms are found to be half-metallic (regardless of their width) with a half-metal gap of 0.26 eV. Upto 100% spin polarized charge transport is predicted across the Fermi level owing to the giant spin splitting. Transmission spectrum analysis also confirms the separation of spin up and spindown electronic channels. It is revealed that H-passivation of only edge N atoms transforms non-magnetic bare ribbons into energetically stable magnetic semiconductors whereas hydrogenation of both the edges does not affect the electronic and magnetic state of bare ribbons significantly. The results are promising towards the realization of inorganic spintronic devices. © 2015 Published by Elsevier Ltd.
URI: https://doi.org/10.1016/j.ssc.2015.04.003
https://dspace.iiti.ac.in/handle/123456789/8482
ISSN: 0038-1098
Type of Material: Journal Article
Appears in Collections:Department of Physics

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