Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/8542
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dc.contributor.authorSahu, Gayatrien_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:17:32Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:17:32Z-
dc.date.issued2014-
dc.identifier.citationSahu, G., Sahu, V., & Kukreja, L. M. (2014). Ultraviolet photoluminescence from stressed silicon nanoclusters. Journal of Applied Physics, 115(8) doi:10.1063/1.4866361en_US
dc.identifier.issn0021-8979-
dc.identifier.otherEID(2-s2.0-84896776207)-
dc.identifier.urihttps://doi.org/10.1063/1.4866361-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/8542-
dc.description.abstractSynthesis of UV light emitting stressed Si nanoclusters embedded in amorphous Si layer, using a dual Ag ion implantation technique has been reported. The stressed nanoclusters exhibit a very narrow photo-luminescence in UV regime at around 3.28 eV. Presence of metal ions like Ag, in the vicinity of Si nanoclusters enhances the luminescence due to localized surface plasmon resonance effect. The magnitude of stress has been calculated using Raman scattering method. © 2014 AIP Publishing LLC.en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceJournal of Applied Physicsen_US
dc.subjectAmorphous siliconen_US
dc.subjectLuminescenceen_US
dc.subjectMetal ionsen_US
dc.subjectMetalsen_US
dc.subjectNanoclustersen_US
dc.subjectPlasmonsen_US
dc.subjectSurface plasmon resonanceen_US
dc.subjectAmorphous Sien_US
dc.subjectImplantation techniqueen_US
dc.subjectLocalized surface plasmon resonanceen_US
dc.subjectScattering methodsen_US
dc.subjectSi nanoclusteren_US
dc.subjectStressed siliconen_US
dc.subjectUltraviolet photoluminescenceen_US
dc.subjectUV light-emittingen_US
dc.subjectSiliconen_US
dc.titleUltraviolet photoluminescence from stressed silicon nanoclustersen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Physics

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